DMN2004K_10 DIODES [Diodes Incorporated], DMN2004K_10 Datasheet

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DMN2004K_10

Manufacturer Part Number
DMN2004K_10
Description
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Manufacturer
DIODES [Diodes Incorporated]
Datasheet
1.DMN2004K_10.pdf (6 pages)
Ordering Information
Marking Information
Product Summary
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R
performance, making it ideal for high efficiency power management
applications.
•
•
Notes:
Date Code Key
DMN2004K
Document number: DS30938 Rev. 5 - 2
DC-DC Converters
Power management functions
V
Month
(BR)DSS
Code
Code
Year
20V
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
ESD PROTECTED TO 2kV
Part Number
DMN2004K-7
DS(on)
) and yet maintain superior switching
0.55Ω @ V
Jan
0.9Ω @ V
1
2006
T
R
DS(ON)
(Note 3)
GS
Feb
GS
2
= 1.8V
= 4.5V
2007
Mar
3
U
NAB
Top View
SOT-23
T
A
630mA
410mA
Apr
4
= 25°C
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
I
D
2008
www.diodes.com
V
May
5
Gate
SOT-23
NAB = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
Case
1 of 6
Gate
Protection
Diode
Equivalent Circuit
Features and Benefits
•
•
•
•
•
•
•
•
•
Mechanical Data
•
•
•
•
•
•
Jun
6
Low On-Resistance: R
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected up to 2KV
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 standards for High Reliability
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
2009
W
Drain
Source
Jul
7
Aug
8
2010
X
DS(ON)
G
Top View
Sep
= 550
9
D
3000/Tape & Reel
(max)
Packaging
2011
S
Oct
Y
mΩ @ V
O
DMN2004K
GS
Nov
© Diodes Incorporated
N
November 2010
= 4.5V
2012
Z
Dec
D

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DMN2004K_10 Summary of contents

Page 1

Product Summary V R (BR)DSS DS(ON) 0.55Ω 4.5V GS 20V 0.9Ω 1.8V GS Description and Applications This new generation MOSFET has been designed to minimize the on- state resistance (R ) and yet maintain ...

Page 2

Maximum Ratings @T = 25°C unless otherwise specified A Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 4.5V GS Drain Current (Note 1.8V GS Pulsed Drain Current (Note 5) Thermal Characteristics @T A Characteristic ...

Page 3

V , DRAIN-SOURCE VOLTAGE (V) DS Fig. 1 Typical Output Characteristics T , CHANNEL TEMPERATURE (°C) ch Fig. 3 Gate Threshold Voltage vs. Channel Temperature Pulsed T = 125 C A ...

Page 4

I , DRAIN CURRENT (A) D Fig. 7 On-Resistance vs. Drain Current and Gate Voltage I , DRAIN CURRENT (mA) D Fig. 11 Forward Transfer Admittance vs. Drain Current DMN2004K Document number: DS30938 Rev JUNCTION ...

Page 5

T = 25°C A 0.01 0.001 0 0.2 0.4 0 SOURCE-DRAIN VOLTAGE (V) SD Fig. 13 Diode Forward Voltage vs. Current Package Outline Dimensions Suggested Pad Layout ...

Page 6

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY ...

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