DMN2112SN_0711 DIODES [Diodes Incorporated], DMN2112SN_0711 Datasheet
DMN2112SN_0711
Manufacturer Part Number
DMN2112SN_0711
Description
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Manufacturer
DIODES [Diodes Incorporated]
Datasheet
1.DMN2112SN_0711.pdf
(4 pages)
Maximum Ratings
Thermal Characteristics
Electrical Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 1)
Drain-Source Breakdown Voltage
Gate-Body Leakage
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
Features
•
•
•
•
•
•
Notes:
DMN2112SN
Document number: DS30830 Rev. 4 - 2
Zero Gate Voltage Drain Current
Low On-Resistance
Ideal for Notebook Computer, Portable Phone, PCMCIA
Cards, and Battery Powered Circuits
Lead Free By Design/RoHS Compliant (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
ESD Protected Gate
"Green" Device (Note 3)
1. Pulse width ≤ 300μs, duty cycle ≤ 2%.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Characteristic
Characteristic
Characteristic
ESD Protected
@T
A
= 25°C unless otherwise specified
@T
@T
A
A
= 25°C unless otherwise specified
@ T
= 25°C unless otherwise specified
TOP VIEW
j
Continuous
Continuous
= 25°C
Pulsed
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Symbol
R
BV
V
t
t
D(OFF)
DS (ON)
I
I
IY
C
D(ON)
V
C
C
www.diodes.com
GS(th)
GSS
DSS
t
SD
oss
t
rss
DSS
iss
fs
r
f
I
SC-59
1 of 4
Min
0.5
Symbol
Symbol
T
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Mechanical Data
V
V
j
R
, T
•
•
•
•
•
•
•
•
P
DSS
GSS
I
θ JA
D
Gate
d
STG
EQUIVALENT CIRCUIT
Case: SC-59
Case Material - Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
Gate
Protection
Diode
Typ
220
120
4.2
0.8
⎯
⎯
⎯
⎯
⎯
45
10
75
15
65
Drain
Max
± 10
0.10
0.14
0.25
Source
1.2
1.1
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-55 to +150
Unit
Value
Value
µA
µA
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S
V
500
250
± 8
1.2
4.0
20
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
G
Pin Out Configuration
GS
DS
GS
DS
GS
GS
GS
DS
GS
DS
DD
GS
= 20V, V
= 10V, I
= 10V, I
= 10V, V
= 5V, I
TOP VIEW
= 0V, I
= ± 8V, V
= 4.5V, I
= 2.5V, I
= 1.5V, I
= 0V, I
= 10V, R
D
Test Condition
D
S
D
D
D
= 0.5A,
= 250µA
GS
D
= 1A
GS
GEN
DMN2112SN
D
D
DS
= 1.0mA
=0.5A
= 0.5A
= 0.5A
= 0.1A
S
= 0V
= 0V
= 0V
= 50Ω
© Diodes Incorporated
°C /W
Units
Units
November 2007
mW
°C
V
V
A
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DMN2112SN_0711 Summary of contents
Page 1
Features • Low On-Resistance • Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits • Lead Free By Design/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability • ESD Protected Gate • "Green" Device ...
Page 2
0 DRAIN-SOURCE VOLTAGE (V) DS Fig. 1 Typical Output Characteristics ...
Page 3
... V = 4.5V GS 1.5V Ordering Information (Note 4) Part Number DMN2112SN-7 Notes: 4. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 2007 Code U Month Jan Feb Code 1 2 Package Outline Dimensions TOP VIEW DMN2112SN Document number: DS30830 Rev ...
Page 4
Suggested Pad Layout Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out ...