MX29LV065B ETC1 [List of Unclassifed Manufacturers], MX29LV065B Datasheet

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MX29LV065B

Manufacturer Part Number
MX29LV065B
Description
64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY
Manufacturer
ETC1 [List of Unclassifed Manufacturers]
Datasheet
FEATURES
• Extended single - supply voltage range 2.7V to 3.6V
• 1,048,576 x 8
• Single power supply operation
• Fast access time: 70/90ns
• Low power consumption
• Fully compatible with MX29LV081 device
• Command register architecture
• Auto Erase (chip & sector) and Auto Program
• Erase suspend/Erase Resume
GENERAL DESCRIPTION
The MX29LV081B is a 8-mega bit Flash memory orga-
nized as 1M bytes of 8 bits. MXIC's Flash memories
offer the most cost-effective and reliable read/write non-
volatile random access memory. The MX29LV081B is
packaged in 40-pin TSOP. It is designed to be repro-
grammed and erased in system or in standard EPROM
programmers.
The standard MX29LV081B offers access time as fast
as 70ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention,
the MX29LV081B has separate chip enable (CE) and
output enable (OE) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV081B uses a command register to manage this
functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
P/N:PM1115
- 3.0V only operation for read, erase and program
operation
- 20mA maximum active current
- 0.2uA typical standby current
- Byte/word Programming (7us/12us typical)
- Sector Erase (Sector structure 64K-Byte x16)
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
- Suspends sector erase operation to read data from,
or program data to, any sector that is not being erased,
then resumes the erase.
1
3V ONLY EQUAL SECTOR FLASH MEMORY
• Status Reply
• Ready/Busy pin (RY/BY)
• Sector protection
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1
• Package type:
• Compatibility with JEDEC standard
• 20 years data retention
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX29LV081B uses a 2.7V~3.6V VCC supply
to perform the High Reliability Erase and auto Program/
Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
- Data polling & Toggle bit for detection of program and
erase operation completion.
- Provides a hardware method of detecting program or
erase operation completion.
- Hardware method to disable any combination of
sectors from program or erase operations
- Any combination of sectors can be erased with erase
suspend/resume function.
- Temporary sector unprotect allows code changes in
previously locked sectors.
- 40-pin TSOP
- Pinout and software compatible with single-power
supply Flash
8M-BIT [1M x 8] CMOS SINGLE VOLTAGE
MX29LV081B
REV. 1.1, DEC. 20, 2004

Related parts for MX29LV065B

MX29LV065B Summary of contents

Page 1

FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 1,048,576 x 8 • Single power supply operation - 3.0V only operation for read, erase and program operation • Fast access time: 70/90ns • Low power consumption - ...

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PIN CONFIGURATIONS 40 TSOP (Standard Type) (10mm x 20mm) A16 1 A15 2 A14 3 A13 4 A12 5 A11 RESET RY/BY 12 A18 ...

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BLOCK STRUCTURE Table 1: MX29LV081B SECTOR ARCHITECTURE Sector Sector Size Byte Mode SA0 64Kbytes SA1 64Kbytes SA2 64Kbytes SA3 64Kbytes SA4 64Kbytes SA5 64Kbytes SA6 64Kbytes SA7 64Kbytes SA8 64Kbytes SA9 64Kbytes SA10 64Kbytes SA11 64Kbytes SA12 64Kbytes SA13 64Kbytes ...

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BLOCK DIAGRAM CONTROL CE OE INPUT WE LOGIC RESET ADDRESS LATCH A0-A19 AND BUFFER Q0-Q7 P/N:PM1115 MX29LV081B PROGRAM/ERASE HIGH VOLTAGE MX29LV081B FLASH ARRAY ARRAY SOURCE HV Y-PASS GATE PGM SENSE DATA AMPLIFIER HV PROGRAM DATA LATCH I/O BUFFER 4 WRITE ...

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AUTOMATIC PROGRAMMING The MX29LV081B is byte programmable using the Au- tomatic Programming algorithm. The Automatic Program- ming algorithm makes the external system do not need to have time out sequence nor to verify the data pro- grammed. The typical chip ...

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VID, as shown in table4. To verify whether or not sector being protected, the sec- tor address must appear on the appropriate highest or- der address bit (see Table 1 and ...

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TABLE 4. MX29LV081B COMMAND DEFINITIONS First Bus Command Bus Cycle Cycle Addr Reset 1 XXXH F0H Read 1 RA Read Manufacturer ID 4 XXXH AAH XXXH 55H Read Silicon ID 4 XXXH AAH XXXH 55H Sector Protect 4 XXXH AAH ...

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COMMAND DEFINITIONS Device operations are selected by writing specific ad- dress and data sequences into the command register. Writing incorrect address and data values or writing them in the improper sequence will reset the device to the read mode. Table ...

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REQUIREMENTS FOR READING ARRAY DATA To read array data from the outputs, the system must drive the CE and OE pins to VIL the power control and selects the device the output control and gates array ...

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Flash memory. If RESET is asserted during a program or erase operation, the RY/BY pin remains a "0" (busy) until the internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The system can thus ...

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TABLE 6. SILICON ID CODE Pins A0 A1 Manufacture code VIL VIL Device code VIH VIL Sector Protection X VIH Verification X VIH READING ARRAY DATA The device is automatically set to reading array data after device power-up. No commands ...

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SECTOR ERASE COMMANDS The Automatic Sector Erase does not require the de- vice to be entirely pre-programmed prior to executing the Automatic Sector Erase Set-up command and Au- tomatic Sector Erase command. Upon executing the Automatic Sector Erase command, the ...

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Q7, Q6, or RY/BY. See "Write Operation Status" for information on these status bits. Any commands written to the device during the Em- bedded Program Algorithm are ignored. Note that a ...

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During an Automatic Program or Erase algorithm opera- tion, successive read cycles to any address cause Q6 to toggle. The system ...

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If this time-out condition occurs during sector erase op- eration, it specifies that a particular sector is bad and it may not be reused. However, other sectors are still func- tional and may be used for the program or erase ...

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Q3 Sector Erase Timer After the completion of the initial sector erase command sequence, the sector erase time-out will begin. Q3 will remain low until the time-out is complete. Data Polling and Toggle Bit are valid after the initial sector ...

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CHIP UNPROTECT The MX29LV081B also features the chip unprotect mode, so that all sectors are unprotected after chip unprotect is completed to incorporate any changes in the code recommended to protect all sectors before activating chip unprotect mode. ...

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ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . ..... -65 Ambient Temperature with Power Applied .... ...

Page 19

CAPACITANCE 1.0 MHz SYMBOL PARAMETER CIN1 Input Capacitance CIN2 Control Pin Capacitance COUT Output Capacitance Table 8. DC CHARACTERISTICS Symbol PARAMETER ILI Input Leakage Current ILIT A9 Input Leakage Current ...

Page 20

AC CHARACTERISTICS Table 9. READ OPERATIONS SYMBOL PARAMETER tRC Read Cycle Time (Note 1) tACC Address to Output Delay tCE CE to Output Delay tOE OE to Output Delay tDF OE High to Output Float (Note1) tOEH ...

Page 21

SWITCHING TEST CIRCUITS DEVICE UNDER TEST CL=100pF Including jig capacitance (30pF for MX29LV081-70) SWITCHING TEST WAVEFORMS 3.0V 1.5V INPUT 0V AC TESTING: Inputs are driven at 3.0V for a logic "1" and 0V for a logic "0". Input pulse rise ...

Page 22

Figure 1. READ TIMING WAVEFORMS VIH Addresses VIL VIH CE VIL VIH WE VIL VIH OE VIL HIGH Z VOH Outputs VOL VIH RESET VIL P/N:PM1115 MX29LV081B tRC ADD Valid tACC tCE tOE tOEH tACC tOH DATA Valid 22 tDF ...

Page 23

AC CHARACTERISTICS Table 10. Erase/Program Operations SYMBOL PARAMETER tWC Write Cycle Time (Note 1) tAS Address Setup Time tAH Address Hold Time tDS Data Setup Time tDH Data Hold Time tOES Output Enable Setup Time tGHWL Read ...

Page 24

AC CHARACTERISTICS Table 11. Alternate CE Controlled Erase/Program Operations SYMBOL PARAMETER tWC Write Cycle Time (Note 1) tAS Address Setup Time tAH Address Hold Time tDS Data Setup Time tDH Data Hold Time tOES Output Enable Setup ...

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Figure 2. COMMAND WRITE TIMING WAVEFORM VCC 3V VIH Addresses VIL tAS VIH WE VIL tOES CE VIH VIL tCS OE VIH VIL VIH Data VIL P/N:PM1115 MX29LV081B ADD Valid tAH tWP tCWC tCH tDS tDH DIN 25 tWPH REV. ...

Page 26

AUTOMATIC PROGRAMMING TIMING WAVEFORM One byte data is programmed. Verify in fast algorithm and additional verification by external control are not re- quired because these operations are executed automati- cally by internal control circuit. Programming comple- tion can be verified ...

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Figure 4. AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART Increment Address P/N:PM1115 MX29LV081B START Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data A0H Address 555H Write Program Data/Address Data Poll from system No Verify Word Ok ? YES No ...

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Figure 5. CE CONTROLLED PROGRAM TIMING WAVEFORM 555 for program 2AA for erase Address tWC tWH WE tGHEL OE tCP CE tWS tDS Data tRH RESET RY/BY NOTES: 1.PA=Program Address, PD=Program Data, DOUT=Data Out, DQ7=complement of data written to device. ...

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AUTOMATIC CHIP ERASE TIMING WAVEFORM All data in chip are erased. External erase verification is not required because data is verified automatically by internal control circuit. Erasure completion can be veri- fied by DATA polling and toggle bit checking after ...

Page 30

Figure 7. AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART P/N:PM1115 MX29LV081B START Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 80H Address 555H Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 10H Address 555H ...

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AUTOMATIC SECTOR ERASE TIMING WAVEFORM Sector indicated by A13 to A19 are erased. External erase verify is not required because data are verified automatically by internal control circuit. Erasure comple- tion can be verified by DATA polling and toggle bit ...

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Figure 9. AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART P/N:PM1115 MX29LV081B START Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 80H Address 555H Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 30H Sector Address ...

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Figure 10. ERASE SUSPEND/ERASE RESUME FLOWCHART Note: If the system implements an endless erase suspend/resume loop, or the number of erase suspend/resume is exceeded 1024 times, then the 10ms time delay must be put into consideration. P/N:PM1115 MX29LV081B START Write ...

Page 34

Figure 11. SECTOR PROTECT/UNPROTECT TIMING WAVEFORM VID VIH RESET SA, A6 A1, A0 Sector Protect or Sector Unprotect Data 60h 1us Note: When sector protect, A6=0, A1=1, A0=0. When sector unprotect, A6=1, A1=1, A0=0. P/N:PM1115 MX29LV081B Valid* ...

Page 35

Figure 12. IN-SYSTEM SECTOR PROTECTION ALGORITHM WITH RESET=VID Increment PLSCNT No PLSCNT=25? Yes Device failed P/N:PM1115 MX29LV081B START PLSCNT=1 RESET=VID Wait 1us No Temporary Sector First Write Unprotect Mode Cycle=60H Yes Set up sector address Write 60H to sector address ...

Page 36

Figure 13. IN-SYSTEM SECTOR UNPROTECTION ALGORITHM WITH RESET=VID Increment PLSCNT No PLSCNT=1000? Yes Device failed P/N:PM1115 MX29LV081B START PLSCNT=1 RESET=VID Wait 1us No Temporary Sector First Write Unprotect Mode Cycle=60H ? Yes No All sector Protect all sectors protected? Yes ...

Page 37

Figure 14. TIMING WAVEFORM FOR CHIP UNPROTECTION A1 12V Vcc 3V A9 tVLHT A6 12V Vcc 3V OE tVLHT WE CE Data A18-A12 Notes: tVLHT (Voltage transition time)=4us min. tWPP1 (Write pulse width for sector protect)=100ns min. tWPP2 (Write pulse ...

Page 38

Figure 15. CHIP UNPROTECTION ALGORITHM Increment Sector Addr * It is recommended before unprotect whole chip, all sectors should be protected in advance. P/N:PM1115 MX29LV081B START Protect All Sectors PLSCNT=1 Set OE=A9=VID CE=VIL,A6=1 Activate WE Pulse Time Out 50ms Set ...

Page 39

WRITE OPERATION STATUS Figure 16. DATA POLLING ALGORITHM NOTE : 1.VA=Valid address for programming 2.Q7 should be re-checked even Q5="1" because Q7 may change simultaneously with Q5. P/N:PM1115 MX29LV081B Start Read Q7~Q0 Add.=VA(1) Yes Q7 = Data ? No No ...

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Figure 17. TOGGLE BIT ALGORITHMS NO Note:1.Read toggle bit twice to determine whether or not it is toggling. 2. Recheck toggle bit because it may stop toggling as Q5 change to "1". P/N:PM1115 Start Read Q7-Q0 Read Q7-Q0 (Note 1) ...

Page 41

Figure 18. Data Polling Timings (During Automatic Algorithms) tRC Address VA tACC tCE CE tCH tOE OE tOEH WE DQ7 Q0-Q6 tBUSY RY/BY NOTES: 1. VA=Valid address. Figure shows are first status cycle after command sequence, last status read cycle, ...

Page 42

Figure 19. Toggle Bit Timings (During Automatic Algorithms) tRC Address VA tACC tCE CE tCH tOE OE tOEH WE High Z Q6/Q2 tBUSY RY/BY NOTES: 1. VA=Valid address; not required for Q6. Figure shows first two status cycle after command ...

Page 43

Table 11. AC CHARACTERISTICS Parameter Std Description tREADY1 RESET PIN Low (During Automatic Algorithms) to Read or Write (See Note) tREADY2 RESET PIN Low (NOT During Automatic Algorithms) to Read or Write (See Note) tRP RESET Pulse Width (During Automatic ...

Page 44

Table 12. TEMPORARY SECTOR UNPROTECT Parameter Std. Description tVIDR VID Rise and Fall Time (See Note) tRSP RESET Setup Time for Temporary Sector Unprotect Note: Not 100% tested Figure 21. TEMPORARY SECTOR UNPROTECT TIMING DIAGRAM 12V RESET 0 or Vcc ...

Page 45

Figure 23. TEMPORARY SECTOR UNPROTECT ALGORITHM Temporary Sector Unprotect Completed(Note 2) Note : 1. All protected sectors are temporary unprotected. P/N:PM1115 MX29LV081B Start RESET = VID (Note 1) Perform Erase or Program Operation Operation Completed RESET = VIH VID=11.5V~12.5V 2. ...

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Figure 24. ID CODE READ TIMING WAVEFORM VCC 3V VID ADD VIH A9 VIL VIH ADD A0 VIL tACC VIH A1 VIL ADD VIH A2-A8 A10-A19 VIL CE VIH VIL VIH WE VIL VIH OE VIL VIH DATA VIL Q0-Q7 ...

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ERASE AND PROGRAMMING PERFORMANCE (1) PARAMETER Sector Erase Time Chip Erase Time Byte Programming Time Chip Programming Time Erase/Program Cycles Note: 1.Not 100% Tested, Excludes external system level over head. 2.Typical values measured 3V. 3.Maximum values measured ...

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ORDERING INFORMATION PLASTIC PACKAGE PART NO. ACCESS TIME (ns) MX29LV081BTC-70 70 MX29LV081BTC-90 90 MX29LV081BTI-70 70 MX29LV081BTI-90 90 P/N:PM1115 MX29LV081B OPERATING CURRENT STANDBY CURRENT MAX.(mA) MAX.(uA PACKAGE 40 Pin TSOP 40 Pin ...

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PACKAGE INFORMATION P/N:PM1115 MX29LV081B 49 REV. 1.1, DEC. 20, 2004 ...

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REVISION HISTORY Revision No. Description 1 corrected tRC definition from MAX. to MIN. P/N:PM1115 MX29LV081B Page P20 50 Date DEC/20/2004 REV. 1.1, DEC. 20, 2004 ...

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MX29LV081B MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice. ...

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