APT8018L2VR_06 MICROSEMI [Microsemi Corporation], APT8018L2VR_06 Datasheet - Page 3

• Manufacturer Part Number: APT8018L2VR_06
• Description: Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
• Manufacturer: MICROSEMI [Microsemi Corporation]

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
Case temperature. (°C)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
120
100
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
50
40
30
20
10
0
0
-50
25
0
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
V DS > I D (ON) x R DS (ON)MAX.
V
I
V
D
FIGURE 4, TRANSFER CHARACTERISTICS
GS
GS
= 21.5A
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
-25
= 10V
Junction
temp. (°C)
1
, GATE-TO-SOURCE VOLTAGE (VOLTS)
T
J
50
T
, JUNCTION TEMPERATURE (°C)
T J = +125°C
(watts)
Power
C
0
, CASE TEMPERATURE (°C)
2
T J = +25°C
25
75
3
T J = -55°C
50
100
4
RC MODEL
75
5
100 125 150
0.0545
0.0957
125
6
150
7
0.0487F
0.922F
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
120
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
80
60
40
20
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0
-50
-50
0
0
V
V
GS
NORMALIZED TO
DS
FIGURE 5, R
-25
-25
= 10V @ 21.5A
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
T
5
I
20
J
D
T
, JUNCTION TEMPERATURE (°C)
, DRAIN CURRENT (AMPERES)
C
V GS =15 &10V
0
0
, CASE TEMPERATURE (°C)
10
V GS =10V
25
DS
25
40
(ON) vs DRAIN CURRENT
15
50
50
V GS =20V
60
75
75
20
100 125 150
100 125 150
5.5V
80
25
5V
6V
4.5V
4V
100
30