EN29GL256H EON [Eon Silicon Solution Inc.], EN29GL256H Datasheet

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EN29GL256H

Manufacturer Part Number
EN29GL256H
Description
256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
Manufacturer
EON [Eon Silicon Solution Inc.]
Datasheet
FEATURES
The EN29GL256 offers a fast page access time of 25 ns with a corresponding random access time as
fast as 90 ns. It features a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed
in one operation, resulting in faster effective programming time than standard programming algorithms.
This makes the device ideal for today’s embedded applications that require higher density, better
performance and lower power consumption.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
EN29GL256
256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory
Page mode Flash Memory, CMOS 3.0 Volt-only
• Single power supply operation
- Full voltage range: 2.7 to 3.6 volts read and
• High performance
- Access times as fast as 90 ns
• V
- All input levels (address, control, and DQ input
• 8-word/16-byte page read buffer
• 32-word/64-byte write buffer reduces overall
• Secured Silicon Sector region
- 128-word/256-byte sector for permanent,
- Can be programmed and locked at the factory
• Uniform 64Kword/128KByte Sector
• Suspend and Resume commands for
levels) and outputs are determined by voltage
on V
secure identification through an 8-word/16-
byte random Electronic Serial Number
or by the customer
programming time for multiple-word updates
Architecture
Program and Erase operations
write operations
GENERAL DESCRIPTION
IO
Input/Output 1.65 to 3.6 volts
IO
input. V
Two hundred fifty-six
IO
range is 1.65 to V
sectors
CC
Rev. G, Issue Date: 2011/01/17
1
• Write operation status bits indicate program
• Support for CFI (Common Flash Interface)
• Persistent methods of Advanced Sector
• WP#/ACC input
- Accelerates programming time (when V
- Protects first or last sector regardless of
• Hardware reset input (RESET#) resets
• Ready/Busy# output (RY/BY#) detects
• Minimum 100K program/erase endurance
• Package Options
- 56-pin TSOP
- 64-ball 11mm x 13mm BGA
• Industrial Temperature Range.
applied) for greater throughput during system
production
sector protection settings
cycles.
and erase operation completion
Protection
device
program or erase cycle completion
©2004 Eon Silicon Solution, Inc.,
EN29GL256H/L
www.eonssi.com
HH
is

Related parts for EN29GL256H

EN29GL256H Summary of contents

Page 1

... Ready/Busy# output (RY/BY#) detects program or erase cycle completion • Minimum 100K program/erase endurance cycles. • Package Options sectors - 56-pin TSOP - 64-ball 11mm x 13mm BGA • Industrial Temperature Range. ©2004 Eon Silicon Solution, Inc., 1 Rev. G, Issue Date: 2011/01/17 EN29GL256H www.eonssi.com ...

Page 2

... RFU 28 RFU Note: RFU= Reserved for future use This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 2 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L RFU 56 RFU 55 A16 54 BYTE# 53 Vss 52 DQ15/A-1 51 DQ7 50 DQ14 ...

Page 3

... D5 E5 A19 DQ5 D4 E4 A20 DQ2 DQ0 RFU RFU 3 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H RFU RFU RFU BYTE# DQ15 / A -1 VSS DQ14 DQ13 DQ6 DQ12 VCC DQ4 ...

Page 4

... Not Connected to anything This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. FIGURE 3. LOGIC DIAGRAM A0 – A23 CE# OE# WE# Reset# WP#/ACC Byte ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L EN29GL256 DQ0 – DQ15 (A-1) RY/BY# www.eonssi.com ...

Page 5

... V =1.65 – 3 Blo ck Protect Switches Erase Voltage Gen erator Program Voltage Generator STB Timer 5 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L EN29GL256 - DQ0-DQ15 (A-1) Inp ut/Output Buffers STB Chip Enable Data Latch Output Enable ...

Page 6

... Secured Silicon area for storing customer and factory secured information. The Secured Silicon Sector is One Time Programmable. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 6 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L www.eonssi.com ...

Page 7

... SA37 128/64 SA38 128/64 SA39 128/64 SA40 128/64 7 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L Address Range (h) Word mode (x16) 000000–00FFFF 010000–01FFFF 020000–02FFFF 030000–03FFFF 040000–04FFFF 050000–05FFFF 060000–06FFFF 070000–07FFFF 080000–08FFFF 090000– ...

Page 8

... SA80 128/64 SA81 128/64 SA82 128/64 SA83 128/64 8 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L 290000–29FFFF 2A0000–2AFFFF 2B0000–2BFFFF 2C0000–2CFFFF 2D0000–2DFFFF 2E0000–2EFFFF 2F0000–2FFFFF 300000–30FFFF 310000–31FFFF 320000–32FFFF 330000–33FFFF 340000– ...

Page 9

... SA124 128/64 SA125 128/64 SA126 128/64 SA127 128/64 9 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L 540000–54FFFF 550000–55FFFF 560000–56FFFF 570000–57FFFF 580000–58FFFF 590000–59FFFF 5A0000–5AFFFF 5B0000–5BFFFF 5C0000–5CFFFF 5D0000–5DFFFF 5E0000–5EFFFF 5F0000– ...

Page 10

... SA168 128/64 SA169 128/64 SA170 128/64 SA171 128/64 10 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L 800000–80FFFF 810000–81FFFF 820000–82FFFF 830000–83FFFF 840000–84FFFF 850000–85FFFF 860000–86FFFF 870000–87FFFF 880000–88FFFF 890000–89FFFF 8A0000–8AFFFF 8B0000– ...

Page 11

... SA211 128/64 SA212 128/64 SA213 128/64 SA214 128/64 11 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L AC0000–ACFFFF AD0000–ADFFFF AE0000–AEFFFF AF0000–AFFFFF B00000–B0FFFF B10000–B1FFFF B20000–B2FFFF B30000–B3FFFF B40000–B4FFFF B50000–B5FFFF B60000–B6FFFF B70000– ...

Page 12

... SA252 128/64 SA253 128/64 SA254 128/64 SA255 128/64 12 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L D70000–D7FFFF D80000–D8FFFF D90000–D9FFFF DA0000–DAFFFF DB0000–DBFFFF DC0000–DCFFFF DD0000–DDFFFF DE0000–DEFFFF DF0000–DFFFFF E00000–E0FFFF E10000–E1FFFF E20000– ...

Page 13

... WE# RESET# WP#/ACC (Note ± 0. L L/H 13 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L DQ8-DQ15 A0- DQ0- BYTE# A23 DQ7 = OUT OUT ...

Page 14

... The device only support to use autoselect command to access autoselect codes. It does not support to apply VID on address pin A9. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. range is 1. ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L . For example www.eonssi.com ...

Page 15

... Programming to the same address multiple times continuously (for example, “walking” a bit within a word) is permitted. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 15 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L www.eonssi.com ...

Page 16

... Figure 4. Single Word Program This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 16 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L www.eonssi.com ...

Page 17

... DQ6 = TOGGLE, DQ5 = 0. This indicates that the Write Buffer Programming Operation was ABORTED. Note that the Secured Silicon sector, autoselect, and CFI functions are unavailable when a program This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 17 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L www.eonssi.com ...

Page 18

... Use of the write buffer is strongly recommended for programming when multiple words are to be programmed. Figure 5. Write Buffer Programming Operation This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 18 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L www.eonssi.com ...

Page 19

... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. START Write Erase Command Sequence Data Poll from System or Toggle Bit successfully completed Data =FFh? No Yes Erase Done 19 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L www.eonssi.com ...

Page 20

... Erase Suspend or Program Suspend read is needed from the Secured Silicon Sector area, then user must use the proper command sequences to enter and exit this region. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 20 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L www.eonssi.com ...

Page 21

... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications for operations other than accelerated programming, or device HH after power-up sequence is completed. In addition VIH/VIL before powering down ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L from the ACC www.eonssi.com ...

Page 22

... Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 22 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L www.eonssi.com ...

Page 23

... DQ7 status bit as the alternative method of determining the active or inactive status of the write operation. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 23 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L www.eonssi.com ...

Page 24

... DQ7# Toggle 0 N/A 0 Toggle 0 Invalid (Not allowed) Data N/A Toggle Data DQ7# Toggle 0 N/A DQ7# Toggle 0 N/A DQ7# Toggle 0 N/A 24 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L DQ2 DQ1 RY/BY# (note Toggle 1 Toggle N Toggle N N/A N www.eonssi.com ...

Page 25

... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. . This feature allows the host system to detect when data is CC reset current (ICC5). If RESET# is held at VIL, but CC 25 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L www.eonssi.com ...

Page 26

... PPB for each sector. Sector 4~251 are 1 PPB per 4 sectors. 26 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L PPB 0 PPB Lock Bit PPB PPBs Locked PPBs Unlocked. 2. Bit is volatile, and defaults to PPB 2 “ ...

Page 27

... Reserved Programmable Bit 0 = All PPB Erase Command disabled 1 = All PPB Erase (default = 1) Command enabled (default = 1) 27 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L DQ1 DQ0 Persistent Secured Protection Mode Silicon Sector Lock Bit Protection Bit 0 = Persistent 0 = protected Protection enabled ...

Page 28

... Figure 8. PPB Program Algorithm Note base address This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 28 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L www.eonssi.com ...

Page 29

... The PPB Lock Bit must be set (programmed to “0”) only after all PPBs are configured to the desired settings. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 29 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L www.eonssi.com ...

Page 30

... Figure 9. Lock Register Program Algorithm Advanced Sector Protection Software Examples Table7. Sector Protection Schemes: DYB, PPB and PPB Lock Bit Combinations This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 30 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L www.eonssi.com ...

Page 31

... If WE# = CE# = RESET# = VIL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to the read mode on power-up. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 31 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L www.eonssi.com ...

Page 32

... The ACC function is not available when the Secured Silicon Sector is enabled. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. ± 0.3 V. The device requires standard access time (tCE) for read CC 32 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L www.eonssi.com ...

Page 33

... This mode of operation continues until the system issues the Exit Secured Silicon Sector command sequence, or until power is removed from the device. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 33 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L www.eonssi.com ...

Page 34

... CFI query mode and the system can read CFI data at the addresses given in Tables 9~12. The system must write the reset command to return the device to the autoselect mode. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 34 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L www.eonssi.com ...

Page 35

... Description Description N µs N µs (00h = not supported (00h = not supported) N times typical N times typical N times typical N times typical (00h = not supported) Description N bytes. 2**25=32MB=256Mb N 35 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L www.eonssi.com ...

Page 36

... Program Suspend Latency Maximum 2 Bank Organization 57h 0000h 00 = Data at 4Ah is zero Number of Banks This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Description µs N µs 36 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L N bytes www.eonssi.com ...

Page 37

... AAA XXX B0 XXX 30 555 AA 2AA 55 555 555 AA 2AA 55 555 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L Bus Cycles Cycle Cycle Data Addr Data Addr Data 000 7F 100 1C 90 000 7F 200 ...

Page 38

... RD 90 XXX 00 AA 2AA 55 555 AA 555 55 AAA XXX 00 38 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L Bus Cycles Cycle Cycle Data Addr Data Addr Data www.eonssi.com ...

Page 39

... CE OE IL, IH, pin CCmax, WP#/ACC = V V pin 100μ -100μ ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L Min Typ Max Unit ±5 µA ±1 µ 0 ...

Page 40

... Input Pulse Levels Input timing measurement reference levels Output timing measurement reference levels This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. -90 Unit 0.0-3.0 V 1 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L www.eonssi.com ...

Page 41

... Read Toggle and Polling DATA Addresses Stable Output Valid 41 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L Speed Unit -90 Min 90 ns Max 90 ns Max 90 ns Max 25 ns Max 35 ns Max 20 ns ...

Page 42

... Figure 11. Page Read Operation Timings Note: Addresses are A2:A-1 for byte mode. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 42 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L www.eonssi.com ...

Page 43

... Reset Timing NOT during Embedded Algorithms This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Description t READY1 t RP1 RP2 READY2 43 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L Speed Test Unit Setup -90 Min 10 us Min 500 ns Min 50 ns Min ...

Page 44

... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Test Setup Min Min Min t CBH Byte# timings for Read Operations t BCS Byte #timings for Write Operations 44 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L Speed Unit - RBH www.eonssi.com ...

Page 45

... Toggle and Min Polling DATA# Min Min Min Min Min Typ Typ Max Typ Max Typ Min Min Max Min 45 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L Speed Unit - ...

Page 46

... Description Min Min Min Min Min Min Min Min Min Min Typ Typ Max Typ Max 46 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L Speed Unit - ...

Page 47

... 0x555 for chip erase WPH WHWH2 0x30 10 for chip erase BUSY 47 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L Read Status Data (last two cycles Status D OUT t RB =true data at read address. out www.eonssi.com ...

Page 48

... WPH t WHWH1 BUSY is the true data at the program address. OUT measurement references. It cannot occur as shown during a valid command VCS 48 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L Program Command Sequence (last 2 cycles Status OUT t RB www.eonssi.com ...

Page 49

... Comple Complement -ment Status Status Data Data Valid Status Valid Status (first read) (second read) 49 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L VA Valid Data True True Valid Data VA VA Valid Data Valid Status (stops toggling) www.eonssi.com ...

Page 50

... PD for Program 0x30 for Sector Erase 0x10 for Chip Erase Enter Erase Erase Suspend Suspend Program Erase Enter Suspend Read 50 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 EN29GL256H/L VA Status D OUT Erase Resume Enter Erase Erase Suspend Suspend Complete Program Read www ...

Page 51

... Test Setup OUT Test Conditions 150°C 125°C ©2004 Eon Silicon Solution, Inc., 51 Rev. G, Issue Date: 2011/01/17 EN29GL256H/L Comments Excludes 00h programming prior to erasure Excludes system level overhead Minimum 100K cycles Typ Max Unit 6 7 7.5 9 ...

Page 52

... B + 1.5 V for periods up to 20ns. See figure below - Full Voltage Range: 2.7 to 3.6V Vcc +1.5V ©2004 Eon Silicon Solution, Inc., 52 Rev. G, Issue Date: 2011/01/17 EN29GL256H/L Value Unit °C °C °C 200 –1.0V for periods Value Unit ° ...

Page 53

... FIGURE 20. 56L TSOP 14mm x 20mm package outline DIMENSION IN MM SYMBOL MIN 0. 20. 18. 14. 0.17 L 0.5 R 0.08 0 θ 0 Note : 1. Coplanarity: 0.1 mm This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. NOR MAX - - - 1. 0.15 1. 0.22 0.27 0.60 0.70 0.15 0. ©2004 Eon Silicon Solution, Inc., 53 Rev. G, Issue Date: 2011/01/17 EN29GL256H/L www.eonssi.com ...

Page 54

... FIGURE 21. 64-ball Ball Grid Array (BGA), 11 X13 mm, Pitch 1mm package outline DIMENSION IN MM SYMBOL MIN 0.40 A2 0.60 D 12.90 E 10. 0.50 This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. NOR MAX - - - 1.40 0.50 0.60 0.66 0.76 13.00 13.10 11.00 11. 0.60 0.70 ©2004 Eon Silicon Solution, Inc., 54 Rev. G, Issue Date: 2011/01/17 EN29GL256H/L www.eonssi.com ...

Page 55

... Please contact your local sales office for additional information about Eon memory solutions. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. cFeon Top Marking Example: cFeon Part Number: XXXX-XXX Lot Number: XXXXX Date Code: XXXXX ©2004 Eon Silicon Solution, Inc., 55 Rev. G, Issue Date: 2011/01/17 EN29GL256H/L www.eonssi.com ...

Page 56

... SECTOR for WRITE PROTECT (WP#/ACC= highest address sector protected L = lowest address sector protected BASE PART NUMBER EN = Eon Silicon Solution Inc. 29GL = FLASH, 3V Page Mode Flash Memory 256 = 256 Megabit (32M 16M x 16) ©2004 Eon Silicon Solution, Inc., 56 Rev. G, Issue Date: 2011/01/17 EN29GL256H/L www.eonssi.com ...

Page 57

... Output Load Capacitance from 100pF to 30pF on page 40 Update the G and 41. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. t “ from Min. to Max on page 45. BUSY B ©2004 Eon Silicon Solution, Inc., 57 Rev. G, Issue Date: 2011/01/17 EN29GL256H/L Date 2009/02/18 2009/05/12 2009/7/14 2009/07/22 2010/01/26 2010/03/31 2011/01/17 www.eonssi.com ...

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