HMC406MS8GE HITTITE [Hittite Microwave Corporation], HMC406MS8GE Datasheet

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HMC406MS8GE

Manufacturer Part Number
HMC406MS8GE
Description
GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 6 GHz
Manufacturer
HITTITE [Hittite Microwave Corporation]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HMC406MS8GE
Manufacturer:
RFMD
Quantity:
5 000
Part Number:
HMC406MS8GE
Manufacturer:
ADI/亚德诺
Quantity:
20 000
Part Number:
HMC406MS8GETR
Manufacturer:
TI
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Manufacturer:
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Quantity:
20 000
11 - 14
11
Typical Applications
The HMC406MS8G(E) is ideal for:
• WiMAX & WiLAN
• DSRC
• Military & Maritime
• Private Mobile Radio
• UNII & ISM
Functional Diagram
Electrical Specifi cations,
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Parameter
T
A
v05.1209
= +25° C, Vs = 5V, Vpd = 5V
Order On-line at www.hittite.com
Vpd = 0V/5V
tON, tOFF
Vpd = 5V
HMC406MS8G
Min.
13
21
34
Features
Gain: 17 dB
Saturated Power: +29 dBm
38% PAE
Supply Voltage: +5V
Power Down Capability
Low External Part Count
General Description
The HMC406MS8G(E) is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT) MMIC
Power amplifi er which operates between 5 and 6
GHz. The amplifi er is packaged in a low cost, surface
mount 8 leaded package with an exposed base
for improved RF and thermal performance. With
a minimum of external components, the amplifi er
provides 17 dB of gain and +29 dBm of saturated
power at 38% PAE from a +5V supply voltage. Vpd
can be used for full power down or RF output power/
current control.
0.002 / 300
5 - 6
Typ.
0.03
6.0
27
38
35
16
10
24
7
8
POWER AMPLIFIER, 5 - 6 GHz
Max.
0.04
21
GaAs InGaP HBT MMIC
Min.
14
24
34
/
406MS8GE
0.002 / 300
5.7 - 5.9
0.03
Typ.
6.0
17
11
27
29
38
35
9
7
Max.
0.04
21
dB/ °C
Units
dBm
dBm
dBm
GHz
mA
mA
dB
dB
dB
dB
ns

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HMC406MS8GE Summary of contents

Page 1

Typical Applications The HMC406MS8G(E) is ideal for: • WiMAX & WiLAN • DSRC • Military & Maritime • Private Mobile Radio 11 • UNII & ISM Functional Diagram Electrical Specifi cations, Parameter Frequency Range Gain Gain Variation Over Temperature Input ...

Page 2

Broadband Gain & Return Loss -10 -15 -20 - FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 -10 -15 -20 -25 -30 4.5 5 5.5 6 FREQUENCY (GHz) ...

Page 3

Power Compression @ 5.8 GHz Noise Figure vs. Temperature 4.5 5 FREQUENCY (GHz) Reverse Isolation vs. ...

Page 4

... Package Information Part Number Package Body Material HMC406MS8G Low Stress Injection Molded Plastic HMC406MS8GE RoHS-compliant Low Stress Injection Molded Plastic [1] Max peak refl ow temperature of 235 °C [2] Max peak refl ow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: ...

Page 5

Pin Descriptions Pin Number Function 1 Vpd GND 3 RFIN 5, 6 RFOUT 8 Vcc Application Circuit Note 1: C3 should be located < 0.020” from Pin 8 (Vcc) Note 2: C2 should be located < ...

Page 6

Evaluation PCB List of Materials for Evaluation PCB 104989 Item Description PCB Mount SMA RF Connector J3 2mm DC Header 330 pF Capacitor, 0603 Pkg. C4 2.2 μF Capacitor, Tantalum C5 0.6 pF ...

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