HMC406MS8G_07 HITTITE [Hittite Microwave Corporation], HMC406MS8G_07 Datasheet

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HMC406MS8G_07

Manufacturer Part Number
HMC406MS8G_07
Description
GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz
Manufacturer
HITTITE [Hittite Microwave Corporation]
Datasheet
5 - 142
5
Typical Applications
This amplifi er is ideal for use as a driver
amplifi er for 5.0 - 6.0 GHz applications:
• UNII
• HiperLAN & 802.11a WLAN
Functional Diagram
Electrical Specifications,
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Parameter
T
A
v04.0307
= +25° C, Vs = 5V, Vpd = 5V
Order On-line at www.hittite.com
Vpd = 0V/5V
tON, tOFF
Vpd = 5V
HMC406MS8G
Min.
13
21
34
POWER AMPLIFIER, 5.0 - 6.0 GHz
Features
Gain: 17 dB
Saturated Power: +29 dBm
38% PAE
Supply Voltage: +5.0 V
Power Down Capability
Low External Part Count
General Description
The HMC406MS8G & HMC406MS8GE are high effi -
ciency GaAs InGaP Heterojunction Bipolar Transistor
(HBT) MMIC Power amplifi ers which operate between
5.0 and 6.0 GHz. The amplifi er is packaged in a low
cost, surface mount 8 leaded package with an exposed
base for improved RF and thermal performance. With
a minimum of external components, the amplifi er pro-
vides 17 dB of gain and +29 dBm of saturated power
at 38% PAE from a +5.0V supply voltage. Vpd can be
used for full power down or RF output power/current
control.
0.002 / 300
5.0 - 6.0
Typ.
0.03
6.0
27
38
35
16
10
24
8
7
Max.
0.04
21
GaAs InGaP HBT MMIC
Min.
14
24
34
/
406MS8GE
0.002 / 300
5.7 - 5.9
0.03
Typ.
6.0
17
11
27
29
38
35
9
7
Max.
0.04
21
dB/ °C
Units
dBm
dBm
dBm
GHz
mA
mA
dB
dB
dB
dB
ns

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HMC406MS8G_07 Summary of contents

Page 1

Typical Applications This amplifi er is ideal for use as a driver amplifi er for 5.0 - 6.0 GHz applications: • UNII • HiperLAN & 802.11a WLAN Functional Diagram Electrical Specifications, Parameter Frequency Range Gain Gain Variation Over Temperature ...

Page 2

Broadband Gain & Return Loss -10 -15 -20 - FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 -10 -15 -20 -25 -30 4.5 5 5.5 6 FREQUENCY (GHz) ...

Page 3

Power Compression @ 5.8 GHz INPUT POWER (dBm) Noise Figure vs. Temperature 4.5 5 FREQUENCY (GHz) ...

Page 4

Absolute Maximum Ratings Collector Bias Voltage (Vcc) +5.5 Vdc Control Voltage (Vpd) +5.5 Vdc RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc) +20 dBm Junction Temperature 150 °C Continuous Pdiss ( °C) 2.1 W (derate 32 ...

Page 5

Pin Descriptions Pin Number Function 1 Vpd GND 3 RFIN 5, 6 RFOUT 8 Vcc For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: ...

Page 6

Evaluation PCB List of Materials for Evaluation PCB 104989 Item Description PCB Mount SMA RF Connector J3 2mm DC Header 330 pF Capacitor, 0603 Pkg. C4 2.2 μF Capacitor, Tantalum C5 0.6 pF ...

Page 7

Application Circuit Note 1: C3 should be located < 0.020” from Pin 8 (Vcc) Note 2: C2 should be located < 0.020” from L1. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, ...

Page 8

Notes: For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 HMC406MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz Order On-line at www.hittite.com 406MS8GE ...

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