HMC407MS8G_07 HITTITE [Hittite Microwave Corporation], HMC407MS8G_07 Datasheet

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HMC407MS8G_07

Manufacturer Part Number
HMC407MS8G_07
Description
GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz
Manufacturer
HITTITE [Hittite Microwave Corporation]
Datasheet
5 - 150
5
Typical Applications
This amplifi er is ideal for use as a power
amplifi er for 5.0 - 7.0 GHz applications:
• UNII
• HiperLAN
Functional Diagram
Electrical Specifications,
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Parameter
T
A
v03.1006
= +25° C, Vs = 5V, Vpd = 5V
Order On-line at www.hittite.com
Vpd = 0V/5V
tON, tOFF
Vpd = 5V
HMC407MS8G
Min.
32
10
21
POWER AMPLIFIER, 5.0 - 7.0 GHz
Features
Gain: 15 dB
Saturated Power: +29 dBm
28% PAE
Supply Voltage: +5.0 V
Power Down Capability
No External Matching Required
General Description
The HMC407MS8G & HMC407MS8GE are high effi -
ciency GaAs InGaP Heterojunction Bipolar Transistor
(HBT) MMIC Power amplifi ers which operate between
5 and 7 GHz. The amplifi er requires no external match-
ing to achieve operation and is thus truly 50 Ohm
matched at input and output. The amplifi er is pack-
aged in a low cost, surface mount 8 leaded package
with an exposed base for improved RF and thermal
performance. The amplifi er provides 15 dB of gain,
+29 dBm of saturated power at 28% PAE from a +5.0V
supply voltage. Power down capability is available to
conserve current consumption when the amplifi er is
not in use.
0.002 / 230
5.0 - 7.0
0.025
Typ.
5.5
15
12
15
25
29
37
30
7
0.035
Max.
18
GaAs InGaP HBT MMIC
Min.
12
22
36
/
407MS8GE
0.002 / 230
5.6 - 6.0
0.025
Typ.
5.5
25
29
40
30
15
12
15
7
0.035
Max.
18
dB/ °C
Units
dBm
dBm
dBm
GHz
mA
mA
dB
dB
dB
dB
ns

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HMC407MS8G_07 Summary of contents

Page 1

Typical Applications This amplifi er is ideal for use as a power amplifi er for 5.0 - 7.0 GHz applications: • UNII • HiperLAN Functional Diagram Electrical Specifications, Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss ...

Page 2

Broadband Gain & Return Loss S21 S11 0 S22 -5 -10 -15 -20 - FREQUENCY (GHz) Input Return Loss vs. Temperature 0 + +85 C -40 ...

Page 3

Power Compression @ 5.8 GHz INPUT POWER (dBm) Noise Figure vs. Temperature ...

Page 4

Gain, Power & Quiescent Supply Current vs. Vpd @ 5.8 GHz 30 25 P1dB 20 Psat Gain Icq 2.5 3 3.5 4 4.5 Vpd (Vdc) Outline Drawing Package Information Part Number Package Body Material HMC407MS8G Low ...

Page 5

Pin Descriptions Pin Number Function 1 Vcc1 2 Vpd GND 4 RFIN 5 RFOUT 8 Vcc2 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 ...

Page 6

Evaluation PCB List of Materials for Evaluation PCB 104987 Item Description PCB Mount SMA RF Connector Header 330 pF Capacitor, 0603 Pkg. C4 2.2 μF Capacitor, Tantalum U1 HMC407MS8G ...

Page 7

Application Circuit Note 1: Vcc1 and Vcc2 may be connected to a common Vcc. Note 2: C2 should be located < 0.020” from Pin 8 (Vcc2). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 ...

Page 8

Notes: For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 HMC407MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz Order On-line at www.hittite.com 407MS8GE ...

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