HMC408LP3E HITTITE [Hittite Microwave Corporation], HMC408LP3E Datasheet

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HMC408LP3E

Manufacturer Part Number
HMC408LP3E
Description
GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz
Manufacturer
HITTITE [Hittite Microwave Corporation]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HMC408LP3E
Manufacturer:
TST
Quantity:
5 000
Part Number:
HMC408LP3E
Manufacturer:
HITTITE
Quantity:
20 000
Part Number:
HMC408LP3ETR
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Part Number:
HMC408LP3ETR
0
11 - 34
11
Typical Applications
The HMC408LP3 / HMC408LP3E is ideal for:
• 802.11a & HiperLAN WLAN
• UNII & Point-to-Point / Multi-Point Radios
• Access Point Radios
Functional Diagram
Electrical Specifi cations,
* Output match optimized for 5.7 - 5.9 GHz operation. See Application Circuit herein.
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss*
Output Power for 1 dB Compression
(P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Harmonics, Pout= 30 dBm, F= 5.8 GHz
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
Parameter
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
T
A
v03.0705
Icq= 750 mA
Icq= 500 mA
= +25° C, Vs = 5V, Vpd = 5V
Vpd= 0V/5V
Order On-line at www.hittite.com
Vpd= 5V
tOn, tOff
2 fo
3 fo
Min.
27
40
17
HMC408LP3
0.002 / 750
5.7 - 5.9
0.045
POWER AMPLIFIER, 5.1 - 5.9 GHz
Typ.
32.5
Features
Gain: 20 dB
Saturated Power: +32.5 dBm @ 27% PAE
Single Supply Voltage: +5V
Power Down Capability
3x3 mm Leadless SMT Package
General Description
The HMC408LP3 & HMC408LP3E are 5.1 - 5.9 GHz
high efficiency GaAs InGaP Heterojunction Bipolar
Transistor (HBT) Power Amplifi er MMICs which offer
+30 dBm P1dB. The amplifi er provides 20 dB of gain,
+32.5 dBm of saturated power, and 27% PAE from a
+5V supply voltage. The input is internally matched
to 50 Ohms while the output requires a minimum of
external components. Vpd can be used for full power
down or RF output power/current control. The amplifi er
is packaged in a low cost, 3x3 mm leadless surface
mount package with an exposed base for improved
RF and thermal performance.
-50
-90
20
30
27
43
50
14
14
8
6
GaAs InGaP HBT MMIC 1 WATT
0.055
Max.
Min.
17
24
36
0.002 / 750
5.1 - 5.9
/
0.045
Typ.
-50
-90
20
27
23
31
39
14
50
8
6
6
408LP3E
0.055
Max.
dB/°C
Units
GHz
dBm
dBm
dBm
dBc
dBc
mA
mA
dB
dB
dB
dB
ns

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HMC408LP3E Summary of contents

Page 1

... Single Supply Voltage: +5V Power Down Capability 3x3 mm Leadless SMT Package General Description The HMC408LP3 & HMC408LP3E are 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) Power Amplifi er MMICs which offer +30 dBm P1dB. The amplifi er provides gain, +32.5 dBm of saturated power, and 27% PAE from a +5V supply voltage ...

Page 2

Broadband Gain & Return Loss 25 15 S21 5 S11 S22 -5 -15 - FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 -10 +25 C -15 +85 C -40 C -20 4.8 5 5.2 ...

Page 3

Power Compression @ 5.8 GHz 36 Pout (dBm) 30 Gain (dB) PAE (%) - INPUT POWER (dBm) Noise Figure vs. Temperature 4.8 5 5.2 5.4 FREQUENCY ...

Page 4

... Package Information Part Number Package Body Material HMC408LP3 Low Stress Injection Molded Plastic HMC408LP3E RoHS-compliant Low Stress Injection Molded Plastic [1] Max peak refl ow temperature of 235 °C [2] Max peak refl ow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: ...

Page 5

Pin Descriptions Pin Number Function 1 Vpd N/C 12, 13 RFIN 9, 10, 11 RFOUT 14 Vcc2 16 Vcc1 GND For price, delivery, and to place orders, please contact Hittite Microwave Corporation: ...

Page 6

... C8 2.2 μF Tantalum Capacitor C9 - C10 0.5 pF Capacitor, 0603 Pkg. C11 10 pF Capacitor, 0402 Pkg 1.6 nH Inductor, 0603 Pkg. HMC408LP3 / HMC408LP3E U1 Amplifi er [2] PCB 104629 Eval Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: ...

Page 7

Application Circuit 11 Recommended Component Values L1 C10 Note 1: C9, C10 should be located < 0.020” from pins 9, 10, & 11. Note 2: Application circuit values shown are ...

Page 8

Notes: For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 HMC408LP3 GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz Order On-line at ...

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