S20K550E3FK9 EPCOS, S20K550E3FK9 Datasheet - Page 13

• Manufacturer Part Number: S20K550E3FK9
• Description: S20K Series 550 Vac 745 Vdc 320 pF Round Metal Oxide Leaded Varistor
• Manufacturer: EPCOS

Reliability data
Test
Climatic sequence
Fast temperature cycling
Damp heat, steady state
Solderability
Please read Cautions and warnings and
Important notes at the end of this document.
Test methods/conditions
CECC 42 000, test 4.16
The specimen shall be subjected to:
a) dry heat at UCT, 16 h
b) damp heat, 1st cycle:
c) cold, LCT, 2 h
d) damp heat, additional 5 cycles:
Then the specimen shall be stored at
room temperature and normal humidity
for 1 to 2 h.
Thereafter, the change of V
measured. Thereafter, insulation resis-
tance R
to CECC 42 000, test 4.8 at V = 500 V.
IEC 60068-2-14, test Na, LCT/UCT,
dwell time 30 min, 5 cycles
The specimen shall be subjected to
40 ±2 °C, 90 to 95% r. H. for 56 days
without load / with 10% of the maximum
continuous DC operating voltage V
Then stored at room temperature and
normal humidity for 1 to 2 h.
Thereafter, the change of V
measured. Thereafter, insulation resis-
tance R
to CECC 42 000, test 4.8 at V = 500 V.
IEC 60068-2-20, test Ta,
method 1 with modified conditions for
lead-free solder alloys: 245 °C, 3 s:
After dipping the terminals to a depth
of approximately 3 mm from the body
in a soldering bath of 245 °C for 3 s, the
terminals shall be visually examined.
55 °C, 93% r. H., 24 h
55 °C/25 °C, 93% r. H., 24 h/cycle.
ins
ins
shall be measured according
shall be measured according
13
11/07
v
v
shall be
shall be
AdvanceD series
Leaded varistors
DC
.
Requirement
|
R
|
No visible damage
|
R
The inspection shall be
carried out under adequate
light with normal eyesight or
with the assistance of a
magnifier capable of giving
a magnification of 4 to
10 times. The dipped sur-
face shall be covered with
a smooth and bright solder
coating with no more than
small amounts of scattered
imperfections such as
pinholes or un-wetted or
de-wetted areas. These
imperfections shall not be
concentrated in one area.
∆V/V (1 mA)
∆V/V (1 mA)
∆V/V (1 mA)
ins
ins
≥1 MΩ
≥1 MΩ
|
|
|
≤10%
≤5%
≤10%