LX5510BLQ-TR Microsemi, LX5510BLQ-TR Datasheet

LX5510BLQ-TR

Manufacturer Part Number

LX5510BLQ-TR

Description

Manufacturer

Microsemi

Datasheet

1.LX5510BLQ-TR.pdf (8 pages)

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Rev. 1.0d, 2005-08-18

optimized for WLAN applications in

the 2.4-2.5 GHz frequency range. The

PA is implemented as a two-stage

monolithic

circuit (MMIC) with active bias and

input/output pre-matching.

InGaP/GaAs Heterojunction Bipolar

Transistor

(MOCVD). With a single supply of

3.3 volts and a low quiescent current

of 70mA the power gain is 19dB 2.4 –

2.5GHz.

IMPORTANT: For the most current data, consult MICROSEMI’s website:

The LX5510B is a power amplifier

The device is manufactured with an

(HBT)

microwave

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

integrated

D E S C R I P T I O N

process

Note: Available in Tape & Reel. Append the letters “TR” to the

This device is classified as EDS Level 1 in accordance with MIL-

STD-883, Method 3015 (HBM) testing. Appropriate ESD

procedures should be used when handling this device.

(64QAM, 54Mbps), the PA provides a

low EVM (Error-Vector Magnitude) of

3.0%, and consumes 135mA total DC

current with the nominal 3.3V bias.

pin 3mmx3mm micro-lead package

(MLP).

profile, and excellent thermal capability

of the MLP package makes the

LX5510B an ideal solution for medium-

gain power amplifier requirements for

IEEE 802.11b/g applications

0 to 70

part number. (i.e. LX5510BLQ-TR)

For +19dBm OFDM output power

The LX5510B is available in a 16-

P R O D U C T H I G H L I G H T

P A C K A G E O R D E R I N F O

(°C)

Integrated Products Division

The compact footprint, low

Microsemi

http://www.microsemi.com

RoHS Compliant / Pb-free

Plastic MLPQ

16 pin

InGaP HBT 2.4 – 2.5 GHz Power Amplifier

LX5510BLQ

RODUCTION

Advanced InGaP HBT

2.4 – 2.5GHz Operation

Single-Polarity 3.3V Supply

Low Quiescent Current I

~70mA

Power Gain ~19dB @ 2.45GHz

and Pout = 19dBm

Total Current 135mA for Pout =

19dBm @ 2.45GHz OFDM

EVM ~ 3.0% for 64QAM /

54Mbps and Pout = 19dBm

Small Footprint (3 x 3 mm

Low Profile (0.9mm)

IEEE 802.11b/g

K E Y F E A T U R E S

ATA

A P P L I C A T I O N S

HEET

LX5510B

)

Page 1

Related parts for LX5510BLQ-TR

LX5510BLQ-TR Summary of contents

Page 1

... RoHS Compliant / Pb-free LX5510BLQ Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX5510BLQ-TR) This device is classified as EDS Level 1 in accordance with MIL- STD-883, Method 3015 (HBM) testing. Appropriate ESD procedures should be used when handling this device. ...

Page 2

... C 10°C/W ASE JC , θ A 50°C/W MBIENT Description REF ). C Microsemi Integrated Products Division LX5510B D S RODUCTION ATA HEET VC2 ...

Page 3

... REF CQ S21 ΔS21 Over 100MHz ΔS21 0°C to +70°C S11 S22 S12 Pout = 19dBm Pout = 19dbm 23 dBm 11 Mbps CCK 11 Mbps CCK 90% ON Microsemi Integrated Products Division LX5510B RODUCTION ATA HEET ≤ ≤ T 70°C except where A = 25°C A LX5510B ...

Page 4

... CQ 11 Mbps CCK Current 3V3 Output Power /(dBm 3.3V 2.88V 70MA C REF CQ Microsemi Integrated Products Division LX5510B RODUCTION ATA HEET Current 3.3V EVM PA Only Output Power /(dBm 3.3V 2.88V 70mA C REF ...

Page 5

... TL1 TL2 TL3 Substrate VREF Microsemi Integrated Products Division LX5510B D S ATA HEET Recommended BOM Value 2.7pF (0402) 2.4pF (0402) 3.9pF (0402) 1µF (0603) 8.2nH(0402) 350 Ω (0402) 200 Ω (0402) 100 Ω (0402) 30/22 mil (L/W) ...

Page 6

... E2 b solder coverage. 2. Due to multiple qualified assembly sub-contractors either package (with different pin one indicators) may be shipped. Package type will be consistent within the smallest individual container Microsemi Integrated Products Division LX5510B D S RODUCTION ATA HEET M I ILLIMETERS NCHES MIN ...

Page 7

... InGaP HBT 2.4 – 2.5 GHz Power Amplifier Ø 1.50mm 4.00mm 3.30mm 3.30mm Side View 0.30mm 2.2mm Ø 330mm ±0.5 Microsemi Integrated Products Division LX5510B D S RODUCTION ATA HEET Top View 12.00 ± 0.3mm Part Orientation Ø 13mm +1.5 -0.2 10.6mm Ø ...

Page 8

... TM PRODUCTION DATA – Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Copyright © ...

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