LX5510BLQ-TR Microsemi, LX5510BLQ-TR Datasheet

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LX5510BLQ-TR

Manufacturer Part Number
LX5510BLQ-TR
Description
Manufacturer
Microsemi
Datasheet
Copyright © 2004
Rev. 1.0d, 2005-08-18
optimized for WLAN applications in
the 2.4-2.5 GHz frequency range. The
PA is implemented as a two-stage
monolithic
circuit (MMIC) with active bias and
input/output pre-matching.
InGaP/GaAs Heterojunction Bipolar
Transistor
(MOCVD). With a single supply of
3.3 volts and a low quiescent current
of 70mA the power gain is 19dB 2.4 –
2.5GHz.
IMPORTANT: For the most current data, consult MICROSEMI’s website:
The LX5510B is a power amplifier
The device is manufactured with an
TM
(HBT)
microwave
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
IC
integrated
D E S C R I P T I O N
process
Note: Available in Tape & Reel. Append the letters “TR” to the
This device is classified as EDS Level 1 in accordance with MIL-
STD-883, Method 3015 (HBM) testing. Appropriate ESD
procedures should be used when handling this device.
(64QAM, 54Mbps), the PA provides a
low EVM (Error-Vector Magnitude) of
3.0%, and consumes 135mA total DC
current with the nominal 3.3V bias.
pin 3mmx3mm micro-lead package
(MLP).
profile, and excellent thermal capability
of the MLP package makes the
LX5510B an ideal solution for medium-
gain power amplifier requirements for
IEEE 802.11b/g applications
T
0 to 70
part number. (i.e. LX5510BLQ-TR)
For +19dBm OFDM output power
The LX5510B is available in a 16-
A
P R O D U C T H I G H L I G H T
P A C K A G E O R D E R I N F O
(°C)
Integrated Products Division
The compact footprint, low
®
Microsemi
http://www.microsemi.com
LQ
RoHS Compliant / Pb-free
Plastic MLPQ
16 pin
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
LX5510BLQ
P
RODUCTION
Advanced InGaP HBT
2.4 – 2.5GHz Operation
Single-Polarity 3.3V Supply
Low Quiescent Current I
~70mA
Power Gain ~19dB @ 2.45GHz
and Pout = 19dBm
Total Current 135mA for Pout =
19dBm @ 2.45GHz OFDM
EVM ~ 3.0% for 64QAM /
54Mbps and Pout = 19dBm
Small Footprint (3 x 3 mm
Low Profile (0.9mm)
IEEE 802.11b/g
D
K E Y F E A T U R E S
ATA
A P P L I C A T I O N S
S
HEET
LX5510B
CQ
2
)
Page 1

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LX5510BLQ-TR Summary of contents

Page 1

... RoHS Compliant / Pb-free LX5510BLQ Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX5510BLQ-TR) This device is classified as EDS Level 1 in accordance with MIL- STD-883, Method 3015 (HBM) testing. Appropriate ESD procedures should be used when handling this device. ...

Page 2

... C 10°C/W ASE JC , θ A 50°C/W MBIENT Description REF ). C Microsemi Integrated Products Division LX5510B D S RODUCTION ATA HEET VC2 ...

Page 3

... REF CQ S21 ΔS21 Over 100MHz ΔS21 0°C to +70°C S11 S22 S12 Pout = 19dBm Pout = 19dbm 23 dBm 11 Mbps CCK 11 Mbps CCK 90% ON Microsemi Integrated Products Division LX5510B RODUCTION ATA HEET ≤ ≤ T 70°C except where A = 25°C A LX5510B ...

Page 4

... CQ 11 Mbps CCK Current 3V3 Output Power /(dBm 3.3V 2.88V 70MA C REF CQ Microsemi Integrated Products Division LX5510B RODUCTION ATA HEET Current 3.3V EVM PA Only Output Power /(dBm 3.3V 2.88V 70mA C REF ...

Page 5

... TL1 TL2 TL3 Substrate VREF Microsemi Integrated Products Division LX5510B D S ATA HEET Recommended BOM Value 2.7pF (0402) 2.4pF (0402) 3.9pF (0402) 1µF (0603) 8.2nH(0402) 350 Ω (0402) 200 Ω (0402) 100 Ω (0402) 30/22 mil (L/W) ...

Page 6

... E2 b solder coverage. 2. Due to multiple qualified assembly sub-contractors either package (with different pin one indicators) may be shipped. Package type will be consistent within the smallest individual container Microsemi Integrated Products Division LX5510B D S RODUCTION ATA HEET M I ILLIMETERS NCHES MIN ...

Page 7

... InGaP HBT 2.4 – 2.5 GHz Power Amplifier Ø 1.50mm 4.00mm 3.30mm 3.30mm Side View 0.30mm 2.2mm Ø 330mm ±0.5 Microsemi Integrated Products Division LX5510B D S RODUCTION ATA HEET Top View 12.00 ± 0.3mm Part Orientation Ø 13mm +1.5 -0.2 10.6mm Ø ...

Page 8

... TM PRODUCTION DATA – Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Copyright © ...

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