BUK7608-40B /T3 Philips, BUK7608-40B /T3 Datasheet - Page 3

no-image

BUK7608-40B /T3

Manufacturer Part Number
BUK7608-40B /T3
Description
Semiconductors and Actives, mosfet
Manufacturer
Philips
Datasheet
Philips Semiconductors
9397 750 11234
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
P der
(%)
I D
(A)
T
10 3
10 2
120
mb
10
80
40
P
1
0
function of mounting base temperature.
der
10 -1
= 25 C; I
0
=
---------------------- -
P
tot 25 C
P
DM
tot
50
single pulse.
100%
100
Capped at 75 A due to package
Limit R DSon = V DS /I D
150
T mb
1
03na19
C)
200
Rev. 01 — 08 April 2003
Fig 2. Continuous drain current as a function of
V
I D
(A)
120
GS
80
40
0
mounting base temperature.
0
10 V
Capped at 75 A due to package
10
DC
50
BUK75/7608-40B
TrenchMOS™ standard level FET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
100
V DS (V)
150
100 s
10 ms
100 ms
t p = 10 s
1 ms
T mb ( C)
03nm32
03nm34
10 2
200
3 of 15

Related parts for BUK7608-40B /T3