S3590-08 Hamamatsu Photonics, K.K.,, S3590-08 Datasheet

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S3590-08

Manufacturer Part Number
S3590-08
Description
Si Pin Photodiode
Manufacturer
Hamamatsu Photonics, K.K.,
Datasheet
P H O T O D I O D E
Si PIN photodiode
S3590-08/-09
* V
S3590-08
S3590-09
S3590-08
S3590-09
General ratings / Absolute maximum ratings
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
R
Type No.
Type No.
l
l
l
l
l
l
l
=70 V
Large area sensors for scintillation detection
Features
Higher sensitivity and low dark current than conventional type
Sensitivity matching with BGO and CsI (TI) scintillators
High quantum efficiency: QE=85 % ( =540 nm)
Low capacitance
High-speed response
High stability
Good energy resolution
response
S p ectral
Window-less
320 to
Epoxy resin
range
(nm)
1100
Window
material
wavelength
se nsitivity
P e ak
(nm)
960
p
Active area
10 × 10
(mm)
(A/W)
0.66
0.66
= p
Photo sensitivity
420 nm
(A/W)
LSO
0.20
0.22
Depletion
thickness
S
480 nm
(mm)
(A/W)
layer
BGO
0.30
0.33
0.3
540 nm
CsI(Tl)
(A/W)
0.36
0.41
l
l
l
l
l
l
Applications
Reverse
V
voltage
Scintillation detectors
Calorimeters
Hodoscopes
TOF counters
Air shower counters
Particle detectors, etc.
cu rre n t
R
100 lx
circuit
S h ort
100
(µA)
100
Isc
Max.
Typ.
(nA)
2 *
current
Dark
I
D
Max.
Absolute maximum ratings
dissipation
(nA)
6 *
Power
(mW)
100
P
coefficient
(tim es/°C )
Temp.
of I
T
1.12
CID
D
temperature
F reque nc y
-20 to +60
Operating
C ut-off
(MHz)
40 *
Topr
(°C)
fc
capacitance
f= 1MHz
Term inal
(pF)
40 *
Ct
temperature
-20 to +80
Storage
Tstg
(°C)
3.8 × 10
(W/Hz
V
R
NEP
=70 V
1/2
-14
)
1

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S3590-08 Summary of contents

Page 1

... Type No. material (mm) S3590-08 Epoxy resin 10 × 10 S3590-09 Window-less Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted ectral response se nsitivity range wavelength Type No. p (nm) (nm) (A/W) S3590-08 320 to 0.66 960 1100 S3590- Applications l Scintillation detectors l Calorimeters l Hodoscopes l TOF counters l ...

Page 2

... KPINA0014EF Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. S3590-08/-09 Photo sensitivity temperature characteristic +1.5 +1 ...

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