SI1021R-T1-GE3/BKN Vishay, SI1021R-T1-GE3/BKN Datasheet

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SI1021R-T1-GE3/BKN

Manufacturer Part Number
SI1021R-T1-GE3/BKN
Description
60v (d-s) p-Ch Mosfet w/Esd Protect
Manufacturer
Vishay
Datasheet
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71410
S-81543-Rev. D, 07-Jul-08
Ordering Information: Si1021R-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
PRODUCT SUMMARY
V
DS(min.)
- 60
G
S
(V)
1
2
(SOT-416)
Top View
SC-75A
a
4.0 at V
Si1021R-T1-GE3 (Lead (Pb)-free and Halogen-free)
b
R
DS(on)
GS
J
= - 10 V
3
= 150 °C)
(Ω)
a
D
P-Channel 60-V (D-S) MOSFET
Marking Code: F
a
V
- 1 to 3.0
GS(th)
(V)
A
= 25 °C, unless otherwise noted
T
T
T
T
I
D
A
A
A
A
- 190
(mA)
= 25 °C
= 85 °C
= 25 °C
= 85 °C
Symbol
T
FEATURES
APPLICATIONS
BENEFITS
• Halogen-free Option Available
• TrenchFET
• High-Side Switching
• Low On-Resistance: 4 Ω
• Low Threshold: - 2 V (typ.)
• Fast Switching Speed: 20 ns (typ.)
• Low Input Capacitance: 20 pF (typ.)
• Miniature Package
• ESD Protected: 2000 V
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
• Battery Operated Systems
• Power Supply Converter Circuits
• Solid-State Relays
• Ease in Driving Switches
• Low Offset Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Easily Driven without Buffer
• Small Board Area
R
J
V
V
I
P
, T
DM
I
thJA
DS
GS
D
D
Memories, Transistors, etc.
stg
®
Power MOSFETs
- 55 to 150
Limit
- 190
- 135
- 650
± 20
- 60
250
130
500
Vishay Siliconix
Si1021R
www.vishay.com
°C/W
Unit
mW
mA
°C
V
RoHS
COMPLIANT
1

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SI1021R-T1-GE3/BKN Summary of contents

Page 1

... SC-75A (SOT-416 Marking Code Top View Ordering Information: Si1021R-T1-E3 (Lead (Pb)-free) Si1021R-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 ° Pulsed Drain Current a Power Dissipation ...

Page 2

... Si1021R Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance Forward Transconductance a Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...

Page 3

... S-81543-Rev. D, 07-Jul- °C, unless otherwise noted A 1200 600 800 1000 1.2 1.5 1.8 Si1021R Vishay Siliconix °C J 900 125 °C 600 300 Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... Si1021R Vishay Siliconix TYPICAL CHARACTERISTICS T 1000 100 T = 125 ° 0.00 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.5 0 250 µA D 0.3 0.2 0.1 - 0.0 - 0.1 - 0 Junction Temperature (°C) J Threshold Voltage Variance Over Temperature 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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