MAX1278ETC-T Maxim Integrated, MAX1278ETC-T Datasheet - Page 2

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MAX1278ETC-T

Manufacturer Part Number
MAX1278ETC-T
Description
Analog to Digital Converters - ADC
Manufacturer
Maxim Integrated
Datasheet

Specifications of MAX1278ETC-T

Number Of Channels
1
Architecture
SAR
Conversion Rate
1800 KSPs
Resolution
12 bit
Input Type
Differential
Snr
70 dB
Interface Type
QSPI, Serial (SPI, Microwire)
Operating Supply Voltage
4.75 V to 5.25 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
TQFN EP
Maximum Power Dissipation
1349 mW
Minimum Operating Temperature
- 40 C
Number Of Converters
1
Voltage Reference
4.096 V
ABSOLUTE MAXIMUM RATINGS
V
V
Digital Inputs
Digital Output
Analog Inputs and
RGND to GND .......................................................-0.3V to +0.3V
ELECTRICAL CHARACTERISTICS
(V
T
1.8Msps, Single-Supply, Low-Power, True-
Differential, 12-Bit ADCs with Internal Reference
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
2
A
DD
L
DC ACCURACY
Resolution
Relative Accuracy
Differential Nonlinearity
Offset Error
Offset-Error Temperature
Coefficient
Gain Error
Gain Temperature Coefficient
DYNAMIC SPECIFICATIONS (f
Signal-to-Noise Plus Distortion
Total Harmonic Distortion
Spurious-Free Dynamic Range
Intermodulation Distortion
Full-Power Bandwidth
Full-Linear Bandwidth
CONVERSION RATE
Minimum Conversion Time
Maximum Throughput Rate
M i ni m um Thr oug hp ut Rate
Track-and-Hold Acquisition Time
Aperture Delay
Aperture Jitter
External Clock Frequency
ANALOG INPUTS (AIN+, AIN-)
Differential Input Voltage Range
Absolute Input Voltage Range
DD
to GND .................-0.3V to the lower of (V
to GND ....................-0.3V to the lower of (V
REF to GND..........-0.3V to the lower of (V
to GND ................-0.3V to the lower of (V
= +25°C.)
_______________________________________________________________________________________
to GND ..............................................................-0.3V to +6V
= +5V ±5%, V
PARAMETER
L
= V
DD
, f
SCLK
IN
= 525kHz sine wave, V
= 28.8MHz, 50% duty cycle, T
SYMBOL
SINAD
t
SFDR
f
CONV
t
DNL
THD
SCLK
IMD
INL
ACQ
V
IN
DD
DD
DD
L
+ 0.3V) and +6V
+ 0.3V) and +6V
+ 0.3V) and +6V
+ 0.3V) and +6V
(Notes 1, 2)
(Notes 1, 3)
Offset nulled
(Note 1)
Up to the 5th harmonic (Note 1)
(Note 1)
f
-3dB point, small-signal method
S/(N + D) > 68dB, single ended
(Note 4)
( N ote 5)
(Note 6)
(Note 7)
AIN+ - AIN-, MAX1276
AIN+ - AIN-, MAX1278
IN1
= 250kHz, f
IN
= V
REF
CONDITIONS
IN2
A
= -40°C to +85°C, unless otherwise noted. Typical values are at
, unless otherwise noted.)
Maximum Current into Any Pin............................................50mA
Continuous Power Dissipation (T
Operating Temperature Range
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-60°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
= 300kHz
12-Pin TQFN (derate 16.9mW/°C above +70°C) ......1349mW
MAX127_ ETC................................................-40°C to +85°C
-V
-1.25
MIN
-1.0
REF
1.8
12
69
10
0
0
A
/ 2
= +70°C)
TYP
104
-80
-83
-78
2.0
±1
±2
70
20
30
5
+V
+1.25
0.556
MAX
V
+1.0
±6.0
±6.0
REF
28.8
V
-76
-76
REF
DD
/ 2
ppm/°C
ppm/°C
UNITS
Msps
MHz
MHz
ksps
MHz
LSB
LSB
LSB
LSB
Bits
dB
dB
dB
dB
µs
ns
ns
ps
V
V

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