STM32F373V8T6 STMicroelectronics, STM32F373V8T6 Datasheet - Page 78

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STM32F373V8T6

Manufacturer Part Number
STM32F373V8T6
Description
ARM Microcontrollers - MCU 32-Bit ARM Cortex M4 72MHz 64kB MCU FPU
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM32F373V8T6

Product Category
ARM Microcontrollers - MCU
Rohs
yes
Core
ARM Cortex M4F
Processor Series
STM32F373xx
Data Bus Width
32 bit
Maximum Clock Frequency
72 MHz
Program Memory Size
64 KB
Data Ram Size
16 KB
On-chip Adc
Yes
Operating Supply Voltage
2.4 V to 3.6 V
Operating Temperature Range
- 40 C to + 85 C
Package / Case
LQFP-100
Mounting Style
SMD/SMT
A/d Bit Size
16 bit
A/d Channels Available
1
Interface Type
CAN, I2C, SPI, USART, USB
Length
14 mm
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Number Of Programmable I/os
84
Number Of Timers
2
On-chip Dac
Yes
Program Memory Type
Flash
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.4 V

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Electrical characteristics
6.3.11
78/128
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
A device reset allows normal operations to be resumed.
The test results are given in
defined in application note AN1709.
Table 47.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
V
V
Symbol
FESD
EFTB
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
V
compliant with the IEC 61000-4-4 standard.
Corrupted program counter
Unexpected reset
Critical Data corruption (control registers...)
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test is
Voltage limits to be applied on any I/O pin
to induce a functional disturbance
Fast transient voltage burst limits to be
applied through 100 pF on V
pins to induce a functional disturbance
EMS characteristics
Parameter
Table
Doc ID 022691 Rev 3
47. They are based on the EMS levels and classes
DD
and V
SS
V
f
conforms to IEC 61000-4-2
V
f
conforms to IEC 61000-4-4
HCLK
HCLK
DD
DD
3.3 V, LQFP100, T
3.3 V, LQFP100, T
72 MHz
72 MHz
Conditions
A
A
+25 °C,
+25 °C,
STM32F37x
DD
and
Level/
Class
3B
4A

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