LCMXO2-4000ZE-1BG332C Lattice, LCMXO2-4000ZE-1BG332C Datasheet - Page 10

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LCMXO2-4000ZE-1BG332C

Manufacturer Part Number
LCMXO2-4000ZE-1BG332C
Description
FPGA - Field Programmable Gate Array 4320 LUTs 275 IO 1.2V 1 Spd
Manufacturer
Lattice
Datasheet

Specifications of LCMXO2-4000ZE-1BG332C

Rohs
yes
Number Of Gates
4 K
Embedded Block Ram - Ebr
92 Kbit
Number Of I/os
275
Maximum Operating Frequency
104 MHz
Operating Supply Voltage
1.14 V to 1.26 V, 1.14 V to 3.465 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
caBGA-332
Distributed Ram
34 Kbit
Minimum Operating Temperature
0 C
Operating Supply Current
124 uA
Factory Pack Quantity
119
User Flash Memory - Ufm
96 Kbit

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LCMXO2-4000ZE-1BG332C
Manufacturer:
Lattice Semiconductor Corporation
Quantity:
10 000
3.0 QUALIFICATION DATA MachXO2 Product Family
The MachXO2 devices are fabricated at Fujitsu on a 65nm non-volatile low power process, then assembled and
tested at ASE in Malaysia and ASEKH in Kaohsiung, Taiwan. The MachXO2 devices are available in three
options – ultra low power (ZE) and high performance (HC and HE) devices. The LCMXO2-1200 is the lead
qualification vehicle for this product family.
Product Family: MachXO2
Packages offered: TQFP, μcBGA, csBGA, caBGA, ftBGA, fpBGA, QFN and WLCSP
Process Technology Node: 65 nm Flash
3.1 MachXO2 Product Family Life (HTOL) Data
High Temperature Operating Life (HTOL) Test
The High Temperature Operating Life test is used to thermally accelerate those wear out and failure
mechanisms that would occur as a result of operating the device continuously in a system application.
Consistent with JEDEC JESD22-A108 “Temperature, Bias, and Operating Life”, a pattern specifically designed
to exercise the maximum amount of circuitry is programmed into the device and this pattern is continuously
exercised at specified voltages as described in test conditions for each device type.
The Early Life Failure Rate (ELFR) test uses large samples sizes for a short duration (48 Hours) HTOL stress to
determine the infant mortality rate of a device family.
MachXO2 Life Test (HTOL) Conditions:
Devices Stressed: LCMXO2
Pre-conditioning: All Flash cells Program/Erase cycled 10,000 times prior to HTOL stress.
Stress Duration: 48, 168, 500, 1000, 2000 hours.
Stress Conditions: MachXO2 (LCMXO2): HTOL Pattern, Vcc=1.26V, Vccio=3.47V T
Method: Lattice Document # 87-101943 and JESD22-A108C
Table 3.1.1: MachXO2 Product Family Life Results
LCMXO2-1200HE
LCMXO2-1200HC
LCMXO2-1200HE
LCMXO2-1200HC
LCMXO2-1200HE
LCMXO2-1200HC
LCMXO2-1200HE
LCMXO2-1200HC
LCMXO2-1200HE
LCMXO2-1200HC
LCMXO2-1200HE
LCMXO2-1200HC
LCMXO2-1200ZE
LCMXO2-1200ZE
LCMXO2-1200ZE
LCMXO2-1200ZE
LCMXO2-1200ZE
LCMXO2-1200ZE
INDEX Return
Product Name
Package
MG132
MG132
MG132
MG132
MG132
MG132
MG132
MG132
MG132
MG132
MG132
MG132
TG144
TG144
TG144
TG144
TG144
TG144
Lot #1
Lot #1
Lot #1
Lot #1
Lot #1
Lot #1
Lot #1
Lot #1
Lot #1
Lot #2
Lot #2
Lot #2
Lot #2
Lot #2
Lot #2
Lot #2
Lot #2
Lot #2
Lot #
293*
300*
299*
300*
300*
300*
Qty
58
59
60
50
50
47
60
56
40
49
49
47
48 Hrs
Result
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
1
1
0
0
0
0
D
D
10
168 Hrs
Result
N/A
N/A
N/A
N/A
N/A
N/A
0
0
0
0
0
0
0
0
0
0
0
0
500 Hrs
Result
N/A
N/A
N/A
N/A
N/A
N/A
0
0
0
0
0
0
0
0
0
0
0
0
Lattice Semiconductor Corporation Doc. #25-106923 Rev. F
1000 Hrs
Result
N/A
N/A
N/A
N/A
N/A
N/A
0
0
0
0
0
0
0
0
0
0
0
0
A
JUNCTION
2000 Hrs
Result
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
0
0
0
C
= >125°C
Cumulative
58,000
59,000
60,000
50,000
50,000
47,000
60,000
56,000
40,000
98,000
98,000
94,000
Hours
N/A
N/A
N/A
N/A
N/A
N/A

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