NCN4555MN ON Semiconductor, NCN4555MN Datasheet

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NCN4555MN

Manufacturer Part Number
NCN4555MN
Description
IC LEVEL SHIFTER SIM CARD 16-QFN
Manufacturer
ON Semiconductor
Datasheet

Specifications of NCN4555MN

Logic Function
Level Shifter
Input Type
Logic
Output Type
Logic
Differential - Input:output
No/No
Voltage - Supply
1.8 V ~ 5.5 V
Operating Temperature
-25°C ~ 85°C
Package / Case
16-TFQFN Exposed Pad
Supply Voltage
1.8 V ~ 5.5 V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Number Of Channels
-
Data Rate
-

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Price
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Manufacturer:
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NCN4555
1.8V / 3V SIM Card Power
Supply and Level Shifter
the voltages between a SIM Card and an external microcontroller or
MPU. A built−in LDO−type DC−DC converter makes the NCN4555
useable to drive 1.8 V and 3.0 V SIM card. The device fulfills the
ISO7816−3 smart card interface standard as well as GSM 11.11 and
related (11.12 and 11.18) and 3G mobile requirements (IMT−2000/3G
TS 31.101). With the STOP pin a low current shutdown mode can be
activated making the battery life longer. The Card power supply
voltage (SIM_V
Features
Typical Applications
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 1
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SIM Card
The NCN4555 is a level shifter analog circuit designed to translate
Specifications – ESD Protection on SIM Pins in Excess of 7 kV
(Human Body Model)
Supports 1.8 V or 3.0 V Operating SIM Card
The LDO is able to Supply More than 50 mA under 1.8 V and 3.0 V
Built−in Pullup Resistor for I/O Pin in Both Directions
All Pins are Fully ESD Protected According to ISO−7816
Supports up to More than 5 MHz Clock
Low−Profile 3x3 QFN−16 Package
Pb−Free Packages are Available*
SIM Card Interface Circuit for 2G, 2.5G and 3G Mobile Phones
Identification Module
Smart Card Readers
Wireless PC Cards
GND
Detect
V
BB
P3
P2
P1
P0
1.8 V to 5.5 V
Figure 1. Typical Interface Application
14
13
15
0.1mF
GND
3
1
2
CC
V
STOP
MOD_V
RST
CLK
I/O
) is selected using a single pin (MOD_V
DD
0.1mF
2.7 V to 5.5 V
CC
10
GND
5
SIM_V
SIM_RST
SIM_CLK
SIM_I/O
CC
7
9
11
8
1mF
1
2
3
4
DET
V
RST
CLK
C4
CC
GND
GND
DET
I/O
C8
CC
1
).
5
6
7
8
NCN4555MN
NCN4555MNG
NCN4555MNR2
NCN4555MNR2G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device
(Note: Microdot may be in either location)
ORDERING INFORMATION
1
A
L
Y
W
G
MARKING DIAGRAM
Ç Ç Ç
Ç Ç Ç
http://onsemi.com
1
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
16
(Pb−Free)
(Pb−Free)
Package
QFN−16
QFN−16
QFN−16
QFN−16
ALYWG
NCN
4555
Publication Order Number:
G
CASE 488AK
MN SUFFIX
QFN−16
3000/Tape & Reel
3000/Tape & Reel
123 Units / Rail
123 Units / Rail
Shipping
NCN4555/D

Related parts for NCN4555MN

NCN4555MN Summary of contents

Page 1

... NCN4555MNG QFN−16 123 Units / Rail (Pb−Free) NCN4555MNR2 QFN−16 3000/Tape & Reel NCN4555MNR2G QFN−16 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...

Page 2

STOP 1 MOD_V Figure 2. QFN−16 Pinout (Top View) STOP 1 MOD_V (1 5.5 V) RST 14 CLK 13 GND 18 kW I/O 15 DATA Figure ...

Page 3

PIN DESCRIPTIONS PIN Name Type 1 STOP INPUT Power Down Mode pin: STOP = Low ³ Low current shutdown mode activated STOP = High ³ Normal Operation A Low level on this pin resets the SIM interface, switching off the ...

Page 4

ATTRIBUTES ESD protection HBM, SIM card pins ( & 11) (Note 1) HBM, All other pins (Note 1) MM, SIM card pins ( & 11) (Note 2) MM, All other pins (Note 2) CDM, ...

Page 5

POWER SUPPLY SECTION (−25°C to +85°C) Pin Symbol 5 V Power Supply BAT 5 I Operating current – I VBAT 5 I Shutdown current – STOP= Low (Note 7) VBAT_SD 3 V Operating Voltage Operating Current – ...

Page 6

SIM INTERFACE SECTION (Note 9) Pin Symbol 9 SIM_RST SIM_V = +3.0 V (MOD_V CC Output RESET V Output RESET V Output RESET Rise Time @ Cout = 30 pF Output RESET Fall Time @ Cout = 30 pF SIM_V ...

Page 7

V = 5.5 V BAT 2.7 V BAT 60 50 −50 −30 − TEMPERATURE (°C) Figure 4. Short Circuit Current IV Temperature at SIM_V = 1.8 V (MOD_V ...

Page 8

CARD SUPPLY CONVERTER The NCN4555 interface DC−DC converter is a Low Dropout Voltage Regulator capable of suppling a current in excess under 1 3.0 V. This device features a very low quiescent current typically lower ...

Page 9

The typical waveform provided in Figure 10 shows how the accelerator operates. During the first 200 ns (typical), the slope of the rise time is solely a function of the pullup resistor associated with the stray capacitance. During this period, ...

Page 10

NCN4555 EVALUATION BOARD AND PCB GUIDELINES MBRA140T3 GND GND GND Figure 12. NCN4555 engineering test board schematic diagram http://onsemi.com 10 2 SENSE_SIM_V CC 100 nF C1 GND MBRA140T3 MOD_V CC S2 STOP GND ...

Page 11

NCN4555 EVALUATION BOARD AND PCB GUIDELINES Top Layer Bottom Layer Figure 13. NCN4555 Printed Circuit Board Layout (Engineering board) http://onsemi.com 11 ...

Page 12

... EXPOSED PAD American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 12 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. ...

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