STM8S103F3M6 STMicroelectronics, STM8S103F3M6 Datasheet - Page 71

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STM8S103F3M6

Manufacturer Part Number
STM8S103F3M6
Description
8-bit Microcontrollers - MCU 8-bit MCU Access 16 MHz 8kb Flash
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM8S103F3M6

Product Category
8-bit Microcontrollers - MCU
Rohs
yes
Core
STM8
Data Bus Width
8 bit

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STM8S103K3 STM8S103F3 STM8S103F2
10.3.6
Symbol
V
V
V
R
t
R
IL
IH
hys
pu
, t
F
I/O port pin characteristics
General characteristics
Subject to general operating conditions for V
pins must be kept at a fixed voltage: using the output mode of the I/O for example or an
external pull-up or pull-down resistor.
Symbol
Parameter
Input low level voltage
Input high level voltage
Hysteresis
Pull-up resistor
Rise and fall time
(10 % - 90 %)
I
(1)
(2)
even when a write/erase operation addresses a single byte.
DD
Data based on characterization results, not tested in production.
The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes
Parameter
Data retention (data
memory) after 300k
erase/write cycles at
T
Supply current (Flash
programming or erasing
for 1 to 128 bytes)
(1)
A
= +125 °C
Table 38: I/O static characteristics
Conditions
V
V
Fast I/Os
Load = 50 pF
Standard and high sink
I/Os
Load = 50 pF
Fast I/Os
DocID15441 Rev 9
DD
DD
= 5 V
= 5 V, V
Conditions
T
RET
IN
DD
= 85°C
= V
and T
SS
A
unless otherwise specified. All unused
Min
0.7 x
-0.3
V
30
DD
-
-
-
-
Min
1
-
(1)
Typ
Electrical characteristics
700
55
-
-
-
-
-
Typ
2
-
Max
125
V
35
0.3 x
20
V
0.3
DD
80
Max
DD
-
(3)
(3)
(3)
+
-
-
Unit
Unit
mV
71/117
ns
mA
V

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