BD12IA5WEFJ-E2 ROHM Semiconductor, BD12IA5WEFJ-E2 Datasheet - Page 12

• Manufacturer Part Number: BD12IA5WEFJ-E2
• Description: Low Dropout Controllers - LDO LDO Reg Pos 1.2V 0.5A
• Manufacturer: ROHM Semiconductor

Specifications of BD12IA5WEFJ-E2

• Rohs: yes
• Input Voltage Max: 5.5 V
• Output Voltage: 1.2 V
• Output Current: 0.5 A
• Load Regulation: 75 mV
• Output Type: Fixed
• Number Of Outputs: 1
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: HTSOP-8
• Input Voltage Min: 2.4 V
• Maximum Power Dissipation: 2110 mW
• Minimum Operating Temperature: - 25 C

●Power dissipation
TSZ22111･15･001
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
BDxxIA5WEFJ
◎HTSOP-J8
Thermal design should allow operation within the following conditions. Note that the temperatures listed are the allowed
temperature limits, and thermal design should allow sufficient margin from the limits.
Chip junction temperature can be determined as follows:
Most of the heat loss that occurs in the BDxxIA5WEFJ series are generated from the output Pch FET. Power loss is
determined by the total V
output current conditions in relation to the heat dissipation characteristics of the V
that heat dissipation may vary substantially depending on the substrate employed (due to the power package incorporated
in the
BDxxIA5WEFJ make certain to factor conditions such as substrate size into the thermal design.
1. Ambient temperature Ta can be no higher than 85℃.
2. Chip junction temperature (Tj) can be no higher than 150℃.
Calculation based on ambient temperature (Ta)
1.0
3.0
2.0
4.0
Tj=Ta+θj-a×W
＜Reference values＞
0
θj-a：HTSOP-J8 153.2℃/W
Power consumption [W] = Input voltage (V
0
⑤3.76W
④2.11W
③1.10W
②0.82W
①0.50W
①0.50W
Example) Where V
=0.08[W]
Power consumption [W] = 3.3V - 2.5V ×0.1A
25
Ambient Temperature :Ta [℃]
CC
113.6℃/W
59.2℃/W
33.3℃/W
Substrate size: 70mm×70mm×1.6mm (substrate with thermal via)
50
-V
O
CC
voltage and output current. Be sure to confirm the system input and output voltage and the
周囲温度:Ta [℃]
=3.3V, V
75
1-layer substrate (copper foil density 0mm×0mm)
2-layer substrate (copper foil density 15mm×15mm)
2-layer substrate (copper foil density 70mm×70mm)
4-layer substrate (copper foil density 70mm×70mm)
O
=2.5V, I
100
O
CC
(Ave) = 0.1A,
) - Output voltage (V
125
12/19
150
Measure condition: mounted on a ROHM board,
and IC
Substrate size: 70mm × 70mm × 1.6mm
・ Solder the substrate and package reverse
① IC only
② 1-layer（copper foil are :0mm×0mm）
③ 2-layer（copper foil are :15mm×15mm）
④ 2-layer（copper foil are :70mm×70mm）
⑤ 4-layer（copper foil are :70mm×70mm）
exposure heat radiation part
θj-a=249.5℃/W
θj-a=153.2℃/W
θj-a=113.6℃/W
θj-a=59.2℃/W
θj-a=33.3℃/W
O
)
×I
O
CC
(Ave)
and V
(Substrate with thermal via)
TSZ02201-0R6R0A600170-1-2
O
in the design. Bearing in mind
9.July.2012 Rev.001
Datasheet