BD70GA5WEFJ-E2 ROHM Semiconductor, BD70GA5WEFJ-E2 Datasheet - Page 12

• Manufacturer Part Number: BD70GA5WEFJ-E2
• Description: Low Dropout Controllers - LDO LDO Reg Pos 7.0V 0.5A
• Manufacturer: ROHM Semiconductor

Specifications of BD70GA5WEFJ-E2

• Rohs: yes
• Input Voltage Max: 14 V
• Output Voltage: 7 V
• Output Current: 0.5 A
• Output Type: Fixed
• Number Of Outputs: 1
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: HTSOP-8
• Input Voltage Min: 4.5 V
• Maximum Power Dissipation: 2110 mW
• Minimum Operating Temperature: - 25 C

●Power Dissipation
TSZ22111･15･001
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© 2012 ROHM Co., Ltd. All rights reserved.
BDxxGA5WEFJ
1.0
3.0
2.0
4.0
◎HTSOP-J8
0
Most of the heat loss that occurs in the BDxxGA5WEFJ is generated from the output Pch FET. Power loss is
determined by the total V
the output current conditions in relation to the heat dissipation characteristics of the V
mind that heat dissipation may vary substantially depending on the substrate employed (due to the power package
incorporated in the
BDxxGA5WEFJ make certain to factor conditions such as substrate size into the thermal design.
0
Thermal design should allow operation within the following conditions. Note that the temperatures listed are the
Chip junction temperature can be determined as follows:
allowed temperature limits, and thermal design should allow sufficient margin from the limits.
⑤3.76W
④2.11W
③1.10W
②0.82W
①0.50W
1. Ambient temperature Ta can be no higher than 85℃.
2. Chip junction temperature (Tj) can be no higher than 150℃.
Calculation based on ambient temperature (Ta)
Example) Where V
Power consumption [W] = Input voltage (V
Tj=Ta+θj-a×W
25
Power consumption [W] = 5.0V - 3.3V ×0.1A
＜Reference values＞
Ambient Temperature :Ta [℃]
50
=0.17[W]
周囲温度:Ta [℃]
CC
CC
θj-a: HTSOP-J8 153.2℃/W
-V
=5.0V, V
75
O
voltage and output current. Be sure to confirm the system input and output voltage and
O
100
=3.3V, I
113.6℃/W
Substrate size: 70mm×70mm×1.6mm (substrate with thermal
O
59.2℃/W
33.3℃/W
(Ave) = 0.1A,
125
CC
12/19
) - Output voltage (V
150
1-layer substrate (copper foil density 0mm×0mm)
2-layer substrate (copper foil density 15mm×15mm)
2-layer substrate (copper foil density 70mm×70mm)
4-layer substrate (copper foil density 70mm×70mm)
Measure condition: mounted on a ROHM board, and IC
Substrate size: 70mm × 70mm × 1.6mm
・Solder the substrate and package reverse exposure
① IC only
② 1-layer (copper foil are :0mm×0mm)
③ 2-layer (copper foil are :15mm×15m)
④ 2-layer (copper foil are :70mm×70mm)
⑤ 4-layer (copper foil are :70mm×70m)
heat radiation part
θj-a=249.5℃/W
θj-a=153.2℃/W
θj-a=113.6℃/W
θj-a=59.2℃/W
θj-a=33.3℃/W
O
) ×I
(Substrate with thermal via)
O
TSZ02201-0R6R0A600190-1-2
(Ave)
CC
and V
23.July.2012 Rev.001
O
in the design. Bearing in
Datasheet