93AA46/SN Microchip Technology, 93AA46/SN Datasheet - Page 7

• Manufacturer Part Number: 93AA46/SN
• Description: IC EEPROM 1KBIT 2MHZ 8SOIC
• Manufacturer: Microchip Technology

Specifications of 93AA46/SN

• Memory Size: 1K (128 x 8 or 64 x 16)
• Format - Memory: EEPROMs - Serial
• Memory Type: EEPROM
• Speed: 1MHz, 2MHz
• Interface: Microwire, 3-Wire Serial
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 8-SOIC (3.9mm Width)
• Memory Configuration: 128 X 8 / 64 X 16
• Ic Interface Type: Microwire
• Clock Frequency: 2MHz
• Supply Voltage Range: 1.8V To 5.5V
• Memory Case Style: SOIC
• No. Of Pins: 8
• Organization: 64 x 16 or 128 K x 8
• Interface Type: Microwire
• Maximum Clock Frequency: 2 MHz
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 1.8 V
• Maximum Operating Current: 3 mA
• Maximum Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: 0 C
• Operating Supply Voltage: 1.8 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

2.7
The WRITE instruction is followed by 16 bits (or by 8
bits) of data which are written into the specified
address. After the last data bit is put on the DI pin,
CS must be brought low before the next rising edge
of the CLK clock. This falling edge of CS initiates the
self-timed auto-erase and programming cycle.
The DO pin indicates the Ready/Busy status of the
device if CS is brought high after a minimum of 250 ns
low (T
DO at logical “0” indicates that programming is still in
progress. DO at logical “1” indicates that the register at
the specified address has been written with the data
specified and the device is ready for another
instruction.
The write cycle takes 4 ms per word typical.
2.8
The ERAL instruction will erase the entire memory array
to the logical “1” state. The ERAL cycle is identical to
the erase cycle except for the different opcode. The
ERAL cycle is completely self-timed and commences
at the falling edge of the CS. Clocking of the CLK pin is
not necessary after the device has entered the Self
Clocking mode. The ERAL instruction is ensured at 5V
FIGURE 2-1:
 2004 Microchip Technology Inc.
10%.
(Program)
(Read)
CSL
CLK
DO
DO
CS
Write
Erase All (ERAL)
) and before the entire write cycle is complete.
DI
V
V
V
V
V
V
V
V
V
V
OH
OH
IH
OL
OL
IH
IH
IL
IL
IL
T
T
DIS
SV
SYNCHRONOUS DATA TIMING
T
CSS
T
CKH
T
PD
T
DIH
T
CKL
Status Valid
The DO pin indicates the Ready/Busy status of the
device if CS is brought high after a minimum of 250 ns
low (T
The ERAL cycle takes (8 ms typical).
2.9
The WRAL instruction will write the entire memory array
with the data specified in the command. The WRAL
cycle is completely self-timed and commences at the
falling edge of the CS. Clocking of the CLK pin is not
necessary after the device has entered the Self Clock-
ing mode. The WRAL command does include an auto-
matic ERAL cycle for the device. Therefore, the WRAL
instruction does not require an ERAL instruction but the
chip must be in the EWEN status. The WRAL instruction
is ensured at 5V
The DO pin indicates the Ready/Busy status of the
device if CS is brought high after a minimum of 250 ns
low (T
The WRAL cycle takes 16 ms typical.
CSL
CSL
Write All (WRAL)
) and before the entire write cycle is complete.
).
T
PD
93AA46/56/66
10%.
T
CSH
T
T
CZ
CZ
DS20067J-page 7