6116SA90TDB IDT, 6116SA90TDB Datasheet - Page 5

• Manufacturer Part Number: 6116SA90TDB
• Description: SRAM 16K Asynch. 2Kx8 HS, L-Pwr, SRAM
• Manufacturer: IDT
• Type: SRAMr

Specifications of 6116SA90TDB

• Memory Size: 16 KB
• Organization: 2 K x 8
• Access Time: 90 ns
• Supply Voltage - Max: 5.5 V
• Supply Voltage - Min: 4.5 V
• Maximum Operating Current: 90 mA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Package / Case: CDIP-24
• Interface: TTL
• Memory Type: CMOS
• Part # Aliases: IDT6116SA90TDB

Low V
AC Test Conditions
V
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
AC Test Load
CS
CC
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit)
DATA
CC
Data Retention Waveform
OUT
255Ω
Figure 1. AC Test Load
t
CDR
V
IH
4.5V
5V
See Figures 1 and 2
30pF*
480Ω
3089 drw 04
GND to 3.0V
1.5V
1.5V
5ns
DATA RETENTION MODE
*Including scope and jig.
3089 tbl 11
V
DR
,
≥ 2V
V
6.42
DR
5
DATA
Military, Commercial, and Industrial Temperature Ranges
OUT
255Ω
(for t
OLZ
Figure 2. AC Test Load
, t
CLZ
4.5V
V
, t
t
R
IH
OHZ
, t
WHZ
5V
, t
CHZ
5pF*
480Ω
3089 drw 05
& t
OW
)
3089 drw 03
,
,