AS7C1026B-15JIN Alliance Memory, AS7C1026B-15JIN Datasheet - Page 3

• Manufacturer Part Number: AS7C1026B-15JIN
• Description: SRAM 1M, 5V, 15ns FAST 64K x 16 Asynch SRAM
• Manufacturer: Alliance Memory

Specifications of AS7C1026B-15JIN

• Rohs: yes
• Memory Size: 1 Mbit
• Organization: 64 Kbit x 16
• Access Time: 15 ns
• Supply Voltage - Max: 5.5 V
• Supply Voltage - Min: 4.5 V
• Maximum Operating Current: 90 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: SOJ-44
• Memory Type: CMOS
• Factory Pack Quantity: 16

Recommended operating conditions
V
V
Capacitance (f = 1MHz, T
Supply voltage
Input voltage
Ambient operating temperature
DC operating characteristics (over the operating range)
Input capacitance
I/O capacitance
Input leakage current
Output leakage current
Operating power supply
current
Standby power supply current
Output voltage
IL
IH
3/26/04, v 1.3
min = -1.0V for pulse width less than 5ns
max = V
Parameter
Parameter
CC
+2.0V for pulse width less than 5ns.
Parameter
| I
Sym
| I
V
I
V
I
I
SB1
LO
CC
SB
LI
OH
OL
a
|
|
= 25 °C, V
commercial
V
Symbol
industrial
CC
I
C
I
OH
CE ≤ V
C
V
V
OL
V
I/O
= Max, CE ≥ V
IN
CC
IN
V
CE
OUT
Test conditions
= –4 mA, V
IN
= 8 mA, V
V
≥ V
= Max, CE = V
V
V
V
≥
Alliance Semiconductor
IN
= GND to V
CC
CC
IL
CC
= GND to V
f = f
V
CC
≤ 0.2 V or
, I
CC
IH ,
= Max,
= Max,
= Max,
–0.2 V, f = 0
OUT
Max
f = f
= NOMINAL)
CC
CC
= 0mA,
Symbol
CC
= Min
A, CE, WE, OE, LB, UB
Max
V
V
= Min
V
CC
T
T
CC
–0.2 V,
CC
IH
IL
A
A
IH
,
Signals
Min Max Min Max Min Max Min Max
I/O
2.4
–
–
–
–
–
–
Min
–0.5
–40
®
4.5
2.2
0
-10
2
1
110
0.4
50
10
1
1
–
Nominal
2.4
–
–
–
–
–
–
5.0
–
–
–
–
-12
100
0.4
45
10
1
1
–
V
Test conditions
IN
V
= V
2.4
–
–
–
–
–
–
IN
V
CC
OUT
-15
= 0 V
Max
5.5
0.8
70
85
+ 0.5
0.4
90
45
10
1
1
–
= 0 V
2.4
-
-
-
-
-
AS7C1026B
-20
Max
5
7
P. 3 of 10
0.4
80
40
10
1
1
-
Unit
o
o
V
V
V
C
C
Unit
Unit
pF
pF
mA
mA
mA
µA
µA
V
V