M29W128GSL70ZS6E NUMONYX, M29W128GSL70ZS6E Datasheet - Page 60

• Manufacturer Part Number: M29W128GSL70ZS6E
• Description: IC FLASH 128MBIT 70NS 64FBGA
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of M29W128GSL70ZS6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 128M (16Mx8, 8Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DC and AC parameters
Figure 15. Write enable controlled program waveforms
1. Only the third and fourth cycles of the Program command are represented. The Program command is followed by the check
2. PA is the address of the memory location to be programmed. PD is the data to be programmed.
3. DQ7 is the complement of the data bit being programmed to DQ7 (see
4.
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of status register data polling bit and by a read operation that outputs the data, DOUT, programmed by the previous
Program command.
SeeTable 24: Write AC characteristics, write enable
and
Table 23: Read AC characteristics
DQ0-DQ15
A0-A22
E
G
W
tAVAV
tGHWL
tELWL
tWLWH
tDVWH
3rd cycle
for details on the timings.
tAVWL
555h
AOh
4th cycle
tWHEH
tWHDX
PA
controlled,
tWHWL
PD
tWLAX
Table 25: Write AC characteristics, chip enable controlled
tWHWH1
Data polling
Section 8.2.1: Data polling bit
PA
DQ7
D OUT
tAVAV
tGHQZ
Read cycle
D OUT
tELQV
tGLQV
(DQ7)).
tAXQX
AI13699b
M29DW128G