CY7C1069DV33-10ZSXI Cypress Semiconductor Corp, CY7C1069DV33-10ZSXI Datasheet - Page 8

• Manufacturer Part Number: CY7C1069DV33-10ZSXI
• Description: IC SRAM 16MBIT 10NS 54TSOP
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY7C1069DV33-10ZSXI

• Memory Size: 16M (2M x 8)
• Package / Case: 54-TSOP II
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 10 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 175 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3.3 V
• Rohs Compliant: YES
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-2959-5; CY7C1069DV33-10ZSXI

Switching Waveforms
Document Number: 38-05478 Rev. *F
Notes
15. CE is a shorthand combination of both CE
16. Data IO is high impedance if OE = V
17. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state.
ADDRESS
ADDRESS
DATA I/O
DATA IO
WE
WE
CE
CE
t
SA
IH
Figure 6. Write Cycle No. 2 (WE Controlled, OE LOW)
(continued)
.
t
SA
1
Figure 5. Write Cycle No. 1 (CE Controlled)
and CE
2
combined. It is active LOW.
t
AW
t
AW
t
SCE
t
t
HZWE
WC
t
WC
t
t
PWE
SCE
t
PWE
t
SD
t
SD
[15, 16, 17]
[15, 16, 17]
t
HD
t
HD
t
LZWE
t
HA
t
HA
CY7C1069DV33
Page 8 of 14
[+] Feedback