CY7C1525V18-200BZXC Cypress Semiconductor Corp, CY7C1525V18-200BZXC Datasheet - Page 10

• Manufacturer Part Number: CY7C1525V18-200BZXC
• Description: IC SRAM 72MBIT 200MHZ 165LFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1525V18-200BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 72M (8M x 9)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Truth Table
The truth table for CY7C1510V18, CY7C1525V18, CY7C1512V18, and CY7C1514V18 follow.
Write Cycle Descriptions
The write cycle description table for CY7C1510V18 and CY7C1512V18 follow.
Notes
Document #: 38-05489 Rev. *F
Write Cycle:
Load address on the rising edge of K;
input write data on K and K rising edges.
Read Cycle:
Load address on the rising edge of K;
wait one and a half cycle; read data on C and C rising edges.
NOP: No Operation
Standby: Clock Stopped
2. X = “Don't Care,” H = Logic HIGH, L = Logic LOW,
3. Device powers up deselected with the outputs in a tri-state condition.
4. “A” represents address location latched by the devices when transaction was initiated. A + 0, A + 1 represents the internal address sequence in the burst.
5. “t” represents the cycle at which a Read/Write operation is started. t + 1, and t + 2 are the first, and second clock cycles respectively succeeding the “t” clock cycle.
6. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.
7. It is recommended that K = K and C = C = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging
8. Is based on a write cycle that was initiated in accordance with the
BWS
NWS
H
H
H
H
symmetrically.
different portions of a write cycle, as long as the setup and hold requirements are achieved.
L
L
L
L
0
0
/
BWS
NWS
H
H
H
H
L
L
L
L
1
1
/
L–H
L–H
L–H
L–H
K
–
–
–
–
Operation
L–H During the data portion of a write sequence:
L–H During the data portion of a write sequence:
L–H No data is written into the devices during this portion of a write operation.
L-H During the data portion of a write sequence:
K
–
–
–
–
During the data portion of a write sequence:
CY7C1510V18 − both nibbles (D
CY7C1512V18 − both bytes (D
CY7C1510V18 − both nibbles (D
CY7C1512V18 − both bytes (D
During the data portion of a write sequence:
CY7C1510V18 − only the lower nibble (D
CY7C1512V18 − only the lower byte (D
CY7C1510V18 − only the lower nibble (D
CY7C1512V18 − only the lower byte (D
During the data portion of a write sequence:
CY7C1510V18 − only the upper nibble (D
CY7C1512V18 − only the upper byte (D
CY7C1510V18 − only the upper nibble (D
CY7C1512V18 − only the upper byte (D
No data is written into the devices during this portion of a write operation.
↑
represents rising edge.
Write Cycle Descriptions
[17:0]
[17:0]
Stopped
[7:0]
[7:0]
L-H
L-H
L-H
K
) are written into the device.
) are written into the device.
) are written into the device.
) are written into the device.
[8:0]
[8:0]
[17:9]
[17:9]
[3:0]
[3:0]
[7:4]
[7:4]
RPS WPS
) is written into the device, D
) is written into the device, D
table. NWS
H
X
L
X
Comments
) is written into the device, D
) is written into the device, D
) is written into the device, D
) is written into the device, D
) is written into the device, D
) is written into the device, D
[2, 8]
CY7C1510V18, CY7C1525V18
CY7C1512V18, CY7C1514V18
H
L
X
X
0
, NWS
D(A + 0) at K(t) ↑
Q(A + 0) at C(t + 1) ↑ Q(A + 1) at C(t + 2) ↑
D = X
Q = High-Z
Previous State
1
, BWS
[2, 3, 4, 5, 6, 7]
0
, BWS
DQ
1
, BWS
[17:9]
[17:9]
[8:0]
[8:0]
[7:4]
[7:4]
[3:0]
[3:0]
2
remains unaltered.
remains unaltered.
and BWS
remains unaltered.
remains unaltered.
remains unaltered.
remains unaltered.
remains unaltered.
remains unaltered.
D(A + 1) at K(t) ↑
D = X
Q = High-Z
Previous State
3
can be altered on
Page 10 of 29
DQ
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