SST39VF512-70-4C-NHE Microchip Technology, SST39VF512-70-4C-NHE Datasheet - Page 8

• Manufacturer Part Number: SST39VF512-70-4C-NHE
• Description: IC FLASH MPF 512K 70NS 32PLCC
• Manufacturer: Microchip Technology

Specifications of SST39VF512-70-4C-NHE

• Memory Type: FLASH
• Memory Size: 512K (64K x 8)
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 32-PLCC
• Format - Memory: FLASH
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Data Bus Width: 8 bit
• Architecture: Sectored
• Interface Type: Parallel
• Access Time: 70 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 20 mA
• Mounting Style: SMD/SMT
• Organization: 64 KB x 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Data Sheet
TABLE 5: DC Operating Characteristics -V
TABLE 6: Recommended System Power-up Timings
TABLE 7: Capacitance
TABLE 8: Reliability Characteristics
©2010 Silicon Storage Technology, Inc.
Symbol
I
I
I
I
V
V
V
V
V
Symbol
T
T
Parameter
C
C
Symbol
N
T
I
DD
SB
LI
LO
LTH
PU-READ
PU-WRITE
DR
IL
IH
IHC
OL
OH
I/O
IN
END
1. Typical conditions for the Active Current shown on the front data sheet page are average values at 25°C
2. Values are for 70 ns conditions. See the Multi-Purpose Flash Power Rating application note for further information.
3. 30 mA max for Erase operations in the industrial temperature range.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. N
1
1
1
1
(room temperature), and V
higher minimum specification.
1,2
END
1
1
endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a
Parameter
Power Supply Current
Read
Program and Erase
Standby V
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
SST39VF512/010/020/040
Parameter
Power-up to Read Operation
Power-up to Program/Erase Operation
Description
I/O Pin Capacitance
Input Capacitance
Parameter
Endurance
Data Retention
Latch Up
2
DD
Current
DD
(Ta = 25°C, f=1 Mhz, other pins open)
3
= 3V for VF devices. Not 100% tested.
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
1
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
V
V
0.7V
DD
DD
Min
-0.3
-0.2
DD
DD
Minimum Specification
= 3.0-3.6V for SST39LF512/010/020/040 and 2.7-3.6V for
Limits
Max
100 + I
0.8
0.2
20
30
15
10
8
1
10,000
100
DD
Units
mA
mA
µA
µA
µA
V
V
V
V
V
Test Conditions
Address input=V
V
CE#=V
CE#=WE#=V
CE#=V
V
V
V
V
V
I
I
OL
OH
Cycles
DD
IN
OUT
DD
DD
DD
Test Condition
Units
Years
=100 µA, V
=GND to V
=-100 µA, V
mA
=V
=V
=V
=V
Minimum
=GND to V
V
V
I/O
DD
DD
DD
DD
IN
IL
IHC
100
100
, OE#=WE#=V
= 0V
= 0V
Max
Min
Max
Max
, V
DD
IL
DD
DD
JEDEC Standard A103
JEDEC Standard A117
, OE#=V
DD
=V
JEDEC Standard 78
DD
, V
ILT
=V
=V
DD
, V
/V
DD
DD
Test Method
DD
IHT
Max
DD
=V
Min
S71150-14-000
IH
IH
, at f=1/T
=V
Min
DD
, all I/Os open
Maximum
DD
Max
12 pF
Units
6 pF
Max
µs
µs
RC
T5.7 1150
T6.1 1150
T7.0 1150
T8.3 1150
Min
01/10