M45PE20-VMN6P NUMONYX, M45PE20-VMN6P Datasheet - Page 39

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M45PE20-VMN6P

Manufacturer Part Number
M45PE20-VMN6P
Description
IC FLASH 2MBIT 75MHZ 8SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheets

Specifications of M45PE20-VMN6P

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
2M (256K x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Clock Frequency
75MHz
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
SO
No. Of Pins
8
Base Number
45
Frequency
75MHz
Ic Generic Number
45PE20
Memory Configuration
256K X 8
Interface Type
Serial, SPI
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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M45PE20
Table 14.
1. Preliminary data.
2. Delivery of parts in T9HX process to start from August 2007.
3. t
4. Value guaranteed by characterization, not 100% tested in production.
5. n = number of bytes to program. int(A) corresponds to the upper integer part of A. Examples: int(1/8) = 1, int(16/8) = 2,
Symbol
t
t
SHQZ
t
RLRH
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RDP
t
t
t
WHSL
SHWL
DVCH
CHDX
CHSH
SHCH
CLQV
CLQX
SHRH
PW
CH
SLCH
CHSL
SHSL
DP
RHSL
CL
PP
int(17/8) = 3.
t
t
CH
f
f
PE
SE
C
R
(3)
(3)
(4)
(5)
(5)
(4)
(4)
+ t
(4)
CL
must be greater than or equal to 1/ f
t
t
t
t
t
t
t
Alt.
t
t
CSS
DSU
t
CSH
REC
CLH
RST
CLL
DIS
HO
f
DH
t
C
AC characteristics (50 MHz operation)
V
Clock frequency for the following instructions:
FAST_READ, PW, PP, PE, SE, DP, RDP,
WREN, WRDI, RDSR, RDID
Clock frequency for READ instructions
Clock High time
Clock Low time
Clock slew rate
S active setup time (relative to C)
S not active hold time (relative to C)
Data in setup time
Data in hold time
S active hold time (relative to C)
S not active setup time (relative to C)
S deselect time
Output disable time
Clock Low to Output Valid
Output hold time
Write protect setup time
Write protect hold time
S to deep power-down
S High to standby mode
Reset pulse width
Reset recovery time
Chip should have been deselected before
reset is de-asserted
Page write cycle time (256 bytes)
Page program cycle time (256 bytes)
Page program cycle time (n bytes)
Page erase cycle time
Sector erase cycle time
50 MHz preliminary data for T9HX technology
Test conditions specified in
(4)
Parameter
(peak to peak)
C
.
(1)
Table 8
D.C.
D.C.
Min
100
100
0.1
50
9
9
5
5
2
5
5
5
0
and
Table 9
int(n/8) × 0.025
(2)
Typ
0.8
11
10
1
DC and AC parameters
Max
33
50
30
10
10
23
20
8
8
3
3
3
5
MHz
MHz
V/ns
Unit
39/47
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
ns
s

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