SCS212AGC ROHM Semiconductor, SCS212AGC Datasheet
SCS212AGC
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SCS212AGC Summary of contents
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SCS212AG SiC Schottky Barrier Diode lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer type lAbsolute maximum ratings (Tj = 25°C) Parameter Reverse voltage (repetitive ...
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SCS212AG lElectrical characteristics (Tj = 25°C) Parameter DC blocking voltage Forward voltage Reverse current Total capacitance Total capacitive charge Switching time lThermal characteristics Parameter Thermal resistance www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Symbol Conditions V I =0.24mA ...
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SCS212AG lElectrical characteristic curves Fig Characteristics F F 100 Pulsed 10 Ta=175ºC Ta=125ºC 1 Ta=75ºC 0.1 Ta=25ºC Ta= -25ºC 0.01 0.001 0.0 0.5 1.0 Forward Voltage : V Fig Characteristics R R 100 Ta=175ºC ...
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SCS212AG lElectrical characteristic curves Fig.5 Thermal Resistance vs. Pulse Width 10 Ta=25ºC Single Pulse 1 0.1 0.01 0.0001 0.001 0.01 0.1 Pulse Width : Pw [s] Fig.7 Ip-Tc Derating Curve 70 Duty=0 Duty=0 Duty=0.5 20 Duty=0.8 ...
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SCS212AG lDimensions (Unit : mm) TO-220AC www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 5/5 Data Sheet 2013.04 - Rev.B ...
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The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifica- tions : 3) Although ROHM is continuously working to improve product reliability and ...