M25PE80-VMN6TP NUMONYX, M25PE80-VMN6TP Datasheet - Page 30

IC FLASH 8MBIT 75MHZ 8SOIC

M25PE80-VMN6TP

Manufacturer Part Number
M25PE80-VMN6TP
Description
IC FLASH 8MBIT 75MHZ 8SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25PE80-VMN6TP

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
8M (1M x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Package
8SOIC N
Cell Type
NOR
Density
8 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3.3 V
Sector Size
256Byte x 4096
Timing Type
Synchronous
Interface Type
Serial-SPI
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M25PE80-VMN6TPTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M25PE80-VMN6TP
Manufacturer:
ST
Quantity:
6 000
Part Number:
M25PE80-VMN6TP
Manufacturer:
ST
0
Part Number:
M25PE80-VMN6TP
Manufacturer:
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Quantity:
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Instructions
6.7
30/66
Read data bytes at higher speed (FAST_READ)
The device is first selected by driving Chip Select (S) Low. The instruction code for the read
data bytes at higher speed (FAST_READ) instruction is followed by a 3-byte address (A23-
A0) and a dummy byte, each bit being latched-in during the rising edge of Serial Clock (C).
Then the memory contents, at that address, is shifted out on serial data output (Q), each bit
being shifted out, at a maximum frequency f
The instruction sequence is shown in
The first byte addressed can be at any location. The address is automatically incremented
to the next higher address after each byte of data is shifted out. The whole memory can,
therefore, be read with a single read data bytes at higher speed (FAST_READ) instruction.
When the highest address is reached, the address counter rolls over to 000000h, allowing
the read sequence to be continued indefinitely.
The read data bytes at higher speed (FAST_READ) instruction is terminated by driving Chip
Select (S) High. Chip Select (S) can be driven High at any time during data output. Any read
data bytes at higher speed (FAST_READ) instruction, while an erase, program or write cycle
is in progress, is rejected without having any effects on the cycle that is in progress.
Figure 13. Read data bytes at higher speed (FAST_READ) instruction sequence
1. Address bits A23 to A20 are don’t care.
S
C
D
Q
S
C
D
Q
0
and data-out sequence
7
1
32 33 34
High Impedance
6
2
Instruction
Dummy byte
5
3
4
4
35
3
5
36 37 38 39 40 41 42 43 44 45 46
2
6
1
7
23
0
8
MSB
22 21
7
9 10
Figure
24-bit address
6
DATA OUT 1
5
C
13.
, during the falling edge of Serial Clock (C).
3
28 29 30 31
4
2
3
1
2
0
1
0
47
MSB
7
6
DATA OUT 2
5
4
3
2
1
0
M25PE80
AI04006
MSB
7

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