1N4007GPE-E3/66 Vishay Semiconductors, 1N4007GPE-E3/66 Datasheet - Page 2

• Manufacturer Part Number: 1N4007GPE-E3/66
• Description: Rectifiers 1.0 Amp 1000 Volt
• Manufacturer: Vishay Semiconductors

Specifications of 1N4007GPE-E3/66

• Product Category: Rectifiers
• Rohs: yes
• Product: Standard Recovery Rectifiers
• Configuration: Single
• Reverse Voltage: 1000 V
• Forward Voltage Drop: 1.1 V
• Recovery Time: 2000 ns
• Forward Continuous Current: 1 A
• Max Surge Current: 30 A
• Reverse Current Ir: 5 uA
• Mounting Style: Through Hole
• Package / Case: DO-41
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 2000

1N4001 thru 1N4007
Vishay General Semiconductor
Note
(1)
RATINGS AND CHARACTERISTICS CURVES
(T
www.vishay.com
2
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Maximum instantaneous
forward voltage
Maximum DC reverse current
at rated DC blocking voltage
Typical junction capacitance
THERMAL CHARACTERISTICS (T
PARAMETER
Typical thermal resistance
ORDERING INFORMATION (Example)
PREFERRED P/N
1N4004-E3/54
1N4004-E3/73
A
Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, PCB mounted
= 25 °C unless otherwise noted)
1.0
0.8
0.6
0.4
0.2
0
0
0.375" (9.5 mm) Lead Length
Fig. 1 - Forward Current Derating Curve
25
(5.0 mm x 5.0 mm)
Copper Pads
Junction Temperature (°C)
0.2" x 0.2"
50
UNIT WEIGHT (g)
75
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TEST CONDITIONS SYMBOL 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 UNIT
0.33
0.33
1.0 A
4.0 V, 1 MHz
100
or Inductive Load
60 Hz Resistive
T
T
125
A
A
= 25 °C
= 125 °C
150
PREFERRED PACKAGE CODE
A
= 25 °C unless otherwise noted)
A
175
= 25 °C unless otherwise noted)
SYMBOL 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 UNIT
R
R
JA
JL
V
C
I
R
F
J
(1)
(1)
54
73
Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current
30
25
20
15
10
5
BASE QUANTITY
1
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5500
3000
Number of Cycles at 60 Hz
1.1
5.0
50
15
50
25
13" diameter paper tape and reel
8.3 ms Single Half Sine-Wave
10
Ammo pack packaging
DELIVERY MODE
T
A
Document Number: 88503
= 55 °C
Revision: 23-Feb-11
100
°C/W
μA
pF
V