BZT55B36 Taiwan Semiconductor, BZT55B36 Datasheet - Page 2

• Manufacturer Part Number: BZT55B36
• Description: Zener Diodes 36 Volt 500mW 2%
• Manufacturer: Taiwan Semiconductor

Specifications of BZT55B36

• Product Category: Zener Diodes
• Rohs: yes
• Zener Voltage: 36 V
• Voltage Tolerance: 2 %
• Power Dissipation: 500 mW
• Maximum Reverse Leakage Current: 0.1 uA
• Maximum Zener Impedance: 80 Ohms
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Package / Case: MiniMelf
• Configuration: Single
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 2500
• Part # Aliases: L1

Figure 2. Typical Change of Working Voltage under Operating
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 3. Typical Change of Working Voltage vs. Junction
1000
600
500
400
300
200
100
100
1.3
1.2
1.1
1.0
0.9
0.8
10
1
0
0
- 60
RATINGS AND CHARACTERISTIC CURVES(BZT55B SERIES)
0
T
j
Conditions at T
T
= 25 °C
amb
V
40
Ztn
T
0
5
j
- Ambient Temperature (°C)
= V
- Junction Temperature (°C)
Temperature
Zt
/V
V
80
Z
Z
10
60
TK
- Z-Voltage (V)
(25 °C)
VZ
I
Z
amb
= 10 x 10
= 5 mA
120
120
15
=25°C
-4
/K
180
- 2 x 10
- 4 x 10
160
20
8 x 10
6 x 10
4 x 10
2 x 10
0
-4
-4
-4
-4
-4
-4
/K
/K
240
200
/K
/K
/K
/K
25
Figure 4. Temperature Coefficient of Vz vs. Z-Voltage
Figure 6. Forward Current vs. Forward Voltage
0.001
0.01
100
Figure 5. Diode Capacitance vs. Z-Voltage
0.1
200
150
100
10
- 5
15
10
50
5
0
0
1
0
0
0
10
0.2
5
V
T
F
V
j
V
- Forward Voltage (V)
= 25 °C
Z
Z
- Z-Voltage (V)
20
10
0.4
- Z-Voltage (V)
I
Z
= 5 mA
0.6
15
30
T
V
j
R
= 25 °C
Version: C08
= 2 V
40
20
0.8
1.0
50
25