VS-GB100TS60NPBF Vishay, VS-GB100TS60NPBF Datasheet - Page 4

• Manufacturer Part Number: VS-GB100TS60NPBF
• Description: IGBT Modules 108 Amp 600 Volt Half-Bridge
• Manufacturer: Vishay

Specifications of VS-GB100TS60NPBF

• Product Category: IGBT Modules
• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 108 A
• Maximum Operating Temperature: + 150 C
• Package / Case: INT-A-PAK
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Factory Pack Quantity: 15

Revision: 27-Mar-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [e-mail], [e-mail],
Fig. 5 - Diode Forward Characteristics, t
L = 200 μH, V
Fig. 7 - Typical Energy Loss vs. I
160
140
120
100
1400
1200
1000
200
150
100
80
60
40
20
800
600
400
200
50
0
0
0
Fig. 6 - Maximum Collector Current vs.
0.0
0
0
Maximum DC Collector Current (A)
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20
20
CC
Tj = 125°C
0.5
Case Temperature
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
= 360 V, R
40
40
V
I
F
60
C
1.0
60
(V)
(A)
g
Eoff
= 4.7 , V
80
80
Tj = 25°C
DC
1.5
C
Eon
, T
100
100
J
= 125 °C,
GE
p
= 500 μs
120
120
2.0
= 15 V
4
1000
100
1000
5000
4500
4000
3500
3000
2500
2000
1500
1000
10
100
500
10
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0
20
T
T
Fig. 10 - Typical Switching Time vs. R
T
0
0
Fig. 8 - Typical Switching Time vs. I
J
J
J
Fig. 9 - Typical Energy Loss vs. R
td(off)
= 125 °C, L = 200 μH, V
= 125 °C, L = 200 μH, V
= 125 °C, L = 200 μH, V
td(off)
tf
tf
td(on)
10
10
I
I
R
CE
CE
tr
40
g
td(on)
tr
= 4.7 , V
= 100 A, V
= 100 A, V
Vishay Semiconductors
20
20
R
I (A)
R
GB100TS60NPbF
G
G
[e-mail]
Eon
60
(Ω)
(Ω)
GE
GE
GE
30
30
= 15 V
= 15 V
= 15 V
Document Number: 94501
Eoff
CC
CC
CC
80
40
40
= 360 V,
= 360 V,
= 360 V,
g
50
50
C
100
g