NVF6P02T3G ON Semiconductor, NVF6P02T3G Datasheet
NVF6P02T3G
Specifications of NVF6P02T3G
Related parts for NVF6P02T3G
NVF6P02T3G Summary of contents
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... Diode Exhibits High Speed, Soft Recovery • Avalanche Energy Specified • AEC Q101 Qualified and PPAP Capable − NVF6P02T3G • NVF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note Vdc −250 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (V = −20 Vdc Vdc ...
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TYPICAL ELECTRICAL CHARACTERISTICS 12 −2.2 V −10 V −2.0 V −7.0 V −5 −2.4 V −3.2 V −1.8 V −4 −1 −1 −1 ...
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TYPICAL ELECTRICAL CHARACTERISTICS 3000 iss 2400 1800 C rss 1200 C iss C 600 oss C rss 0 −V − GATE−TO−SOURCE OR DRAIN−TO−SOURCE ...
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TYPICAL ELECTRICAL CHARACTERISTICS 0.5 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 1.0E-03 1.0E-02 1.0E-01 NORMALIZED TO R 0.0175 W 0.0710 W CHIP JUNCTION 0.0154 F 0.0854 F 1.0E+00 1.0E+01 t, TIME (s) Figure 11. FET ...
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... A 0.08 (0003) A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein ...