RV1C002UNT2CL ROHM Semiconductor, RV1C002UNT2CL Datasheet

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RV1C002UNT2CL

Manufacturer Part Number
RV1C002UNT2CL
Description
MOSFET Nch Small Signal MOSFET
Manufacturer
ROHM Semiconductor
Datasheet

Specifications of RV1C002UNT2CL

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
150 mA
Resistance Drain-source Rds (on)
2 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
VML0806-3
Fall Time
25 ns
Forward Transconductance Gfs (max / Min)
110 mS
Minimum Operating Temperature
- 55 C
Power Dissipation
100 mW
Rise Time
4 ns
Typical Turn-off Delay Time
12 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RV1C002UNT2CL
Manufacturer:
ROHM/罗姆
Quantity:
20 000
lFeatures
1) The world smallest Package (0806size).
2) Low voltage drive(1.2V) makes this
3) Drive circuits can be simple.
4) Built-in G-S Protection Diode.
lApplication
Switching
lAbsolute maximum ratings(T
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
lThermal resistance
Thermal resistance, junction - ambient
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
device ideal for partable equipment.
R
DS(on)
V
RV1C002UN
P
DSS
I
D
(Max.)
D
Nch 20V 150mA Small Signal MOSFET
Parameter
Parameter
100mW
150mA
2.0W
20V
a
= 25°C)
1/10
lOutline
VML0806
lInner circuit
lPackaging specifications
Type
Symbol
R
Symbol
I
D,pulse
thJA
V
V
P
I
T
D
T
DSS
GSS
D
stg
Packaging
Reel size (mm)
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
*1
*3
j
*3
*2
Min.
-
*1 BODY DIODE
*2 ESD PROTECTION DIODE
-55 to +150
(3)
Value
150
600
Values
100
150
20
8
Typ.
(1)
-
(1) Source
(2) Gate
(3) Drain
(2)
1250
Max.
2012.08 - Rev.A
Datasheet
Taping
8,000
T2CL
mW
Unit
180
mA
mA
RY
°C
°C
V
V
8
°C/W
Unit

Related parts for RV1C002UNT2CL

RV1C002UNT2CL Summary of contents

Page 1

RV1C002UN Nch 20V 150mA Small Signal MOSFET V DSS R (Max.) DS(on lFeatures 1) The world smallest Package (0806size). 2) Low voltage drive(1.2V) makes this device ideal for partable equipment. 3) Drive circuits can be simple. ...

Page 2

RV1C002UN lElectrical characteristics(T a Parameter Drain - Source breakdown voltage Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance Transconductance *1 Limited only by maximum temperature allowed. *2 ...

Page 3

RV1C002UN lElectrical characteristics(T a Parameter Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time lBody diode electrical characteristics (Source-Drain)(T Parameter Continuous source current Pulsed source current Forward voltage ...

Page 4

RV1C002UN lElectrical characteristic curves Fig.1 Power Dissipation Derating Curve 120 100 100 Junction Temperature : T Fig.3 Typical Output Characteristics( 1.8V GS ...

Page 5

RV1C002UN lElectrical characteristic curves Fig.5 Breakdown Voltage vs. Junction Temperature 1mA 45 D Pulsed - Junction Temperature : T Fig.7 Gate Threshold Voltage vs. Junction Temperature ...

Page 6

RV1C002UN lElectrical characteristic curves Fig.9 Static Drain - Source On - State Resistance vs. Gate Source Voltage 10mA 150mA Gate ...

Page 7

RV1C002UN lElectrical characteristic curves Fig.13 Static Drain-Source On-State Resistance vs. Drain Current(III) 100 0.1 0.01 0.1 Drain Current : I Fig.15 Static Drain - Source On - State Resistance vs. ...

Page 8

RV1C002UN lElectrical characteristic curves Fig.17 Typical Capacitance vs. Drain - Source Voltage 100 T =25ºC a f=1MHz V = 0.01 0.1 1 Drain - Source Voltage : V Fig.19 Source Current vs. Source Drain Voltage 1 V ...

Page 9

RV1C002UN lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit lNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Fig.1-2 Switching Waveforms ...

Page 10

RV1C002UN lDimensions (Unit : mm) D VML0806 DIM DIM Dimension in mm/inches www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved Patterm of terminal position ...

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No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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