NTDV3055L104-1G ON Semiconductor, NTDV3055L104-1G Datasheet

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NTDV3055L104-1G

Manufacturer Part Number
NTDV3055L104-1G
Description
MOSFET NFET DPAK 60V 12A
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTDV3055L104-1G

Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
70 V
Continuous Drain Current
12 A
Resistance Drain-source Rds (on)
104 mOhms
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
DPAK
Fall Time
80 ns
Gate Charge Qg
20 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
48 W
Rise Time
210 ns
Typical Turn-off Delay Time
40 ns
NTD3055L104,
NTDV3055L104
Power MOSFET
12 Amps, 60 Volts, Logic Level
N−Channel DPAK
power supplies, converters and power motor controls and bridge
circuits.
Features
Typical Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1″ pad size,
2. When surface mounted to an FR4 board using the minimum recommended
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2011
August, 2011 − Rev. 8
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage, Continuous
Drain Current
Total Power Dissipation @ T
Total Power Dissipation @ T
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Thermal Resistance, − Junction−to−Case
Maximum Lead Temperature for Soldering
Designed for low voltage, high speed switching applications in
Bridge Circuits
Lower R
Lower V
Tighter V
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
AEC Q101 Qualified − NTDV3055L104
These Devices are Pb−Free and are RoHS Compliant
Power Supplies
Converters
Power Motor Controls
(Cu Area 1.127 in
pad size, (Cu Area 0.412 in
Derate above 25°C
Energy − Starting T
(V
I
Purposes, 1/8″ from case for 10 seconds
L(pk)
DD
− Non−Repetitive (t
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
− Continuous @ T
− Continuous @ T
− Single Pulse (t
= 11 A, V
= 25 Vdc, V
DS(on)
DS(on)
SD
Specification
DS
2
Rating
GS
).
= 60 Vdc)
J
p
= 5.0 Vdc, L = 1.0 mH
(T
= 25°C
v10 ms)
A
A
p
J
GS
v10 ms)
= 25°C
= 100°C
= 25°C unless otherwise noted)
A
A
A
2
= 10 MW)
).
= 25°C
= 25°C (Note 1)
= 25°C (Note 2)
Symbol
T
V
V
R
R
R
J
V
V
E
I
P
DSS
DGR
, T
T
I
I
DM
qJC
qJA
qJA
GS
GS
AS
D
D
D
L
stg
−55 to
Value
+175
"15
"20
0.32
3.13
71.4
100
260
2.1
1.5
60
60
12
10
45
48
61
1
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Adc
Apk
mJ
°C
°C
W
W
W
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
1 2
1
V
2
(BR)DSS
60 V
3
3
55L104
Y
WW
G
ORDERING INFORMATION
4
4
G
http://onsemi.com
CASE 369C
CASE 369D
STYLE 2
STYLE 2
DPAK−3
DPAK
R
= Device Code
= Year
= Work Week
= Pb−Free Package
N−Channel
DS(on)
104 mW
D
Publication Order Number:
TYP
S
Gate
Gate
DIAGRAMS
MARKING
1
1
NTD3055L104/D
Drain
Drain
Drain
Drain
4
2
4
2
I
D
12 A
3
Source
3
Source
MAX

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NTDV3055L104-1G Summary of contents

Page 1

... Tighter V Specification SD • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • AEC Q101 Qualified − NTDV3055L104 • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Power Motor Controls • ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note Vdc 250 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc ...

Page 3

... ORDERING INFORMATION Device NTD3055L104G NTD3055L104−1G NTD3055L104T4G NTDV3055L104−1G NTDV3055L104T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Package DPAK (Pb−Free) DPAK−3 (Pb−Free) DPAK (Pb−Free) DPAK−3 (Pb− ...

Page 4

DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0. ...

Page 5

... Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses ...

Page 6

TOTAL GATE CHARGE (nC) G Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge DRAIN−TO−SOURCE DIODE CHARACTERISTICS ...

Page 7

SINGLE PULSE T = 25° 100 LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.1 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased ...

Page 8

... DETAIL 0.005 (0.13 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C−01 ISSUE GAUGE ...

Page 9

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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