ECH8601M-TL-H ON Semiconductor, ECH8601M-TL-H Datasheet

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ECH8601M-TL-H

Manufacturer Part Number
ECH8601M-TL-H
Description
MOSFET NCH+NCH 2.5V DRIVE SERIES
Manufacturer
ON Semiconductor
Datasheet

Specifications of ECH8601M-TL-H

Rohs
yes

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Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ECH8601M-TL-H
Quantity:
1 700
Ordering number : EN1174A
ECH8601M
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ.)
7011A-003
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Low ON-resistance
2.5V drive
Common-drain type
Protection diode in
1
8
Parameter
0.65
Bottom View
Top View
2.9
5
4
0.3
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8
0.15
V DSS
V GSS
I D
I DP
P D
P T
Tch
Tstg
Symbol
0 to 0.02
ECH8601M-TL-H
http://semicon.sanyo.com/en/network
SANYO Semiconductors
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1000mm
When mounted on ceramic substrate (1000mm
ECH8601M
Built-in gate protection resistor
Best suited for LiB charging and discharging switch
Halogen free compliance
Conditions
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Electrical Connection
8
1
50112 TKIM/72308PE TIIM TC-00001533
2
TL
×0.8mm) 1unit
7
2
2
×0.8mm)
DATA SHEET
6
3
5
4
: ECH8
: -
Ratings
--55 to +150
Marking
TL
±12
150
1.5
1.6
Lot No.
24
60
No. A1174-1/7
8
Unit
°C
°C
W
W
A
A
V
V

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ECH8601M-TL-H Summary of contents

Page 1

... When mounted on ceramic substrate (1000mm P T When mounted on ceramic substrate (1000mm Tch Tstg Product & Package Information • Package • JEITA, JEDEC • Minimum Packing Quantity : 3,000 pcs./reel ECH8601M-TL-H Packing Type : 0.02 Electrical Connection 8 1 http://semicon.sanyo.com/en/network DATA SHEET Ratings 24 ± ...

Page 2

... =2.5Ω D PW=10μs D.C.≤ ECH8601M P.G S 50Ω Rg=1kΩ Ordering Information Device ECH8601M-TL-H ECH8601M Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =20V =0V I GSS V GS =±8V = (off =10V =1mA | yfs | V DS =10V = (on =4A ...

Page 3

... Drain Current Time -- 1000 (on 100 0.1 1.0 Drain Current ECH8601M 0.4 0.5 0 IT13805 45 Ta=25 ° --60 -- IT13574 =10V =0V ...

Page 4

... R DS (on 0.1 Ta=25 ° Single pulse 3 When mounted on ceramic substrate 2 ✕0.8mm) 1unit 2 (1000mm 0. 0.01 0.1 1.0 Drain-to-Source Voltage ECH8601M 1.8 PW ≤ 10 μs 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0 IT13721 When mounted on ceramic substrate ✕0.8mm) 2 (1000mm ...

Page 5

... Embossed Taping Specifi cation ECH8601M-TL-H ECH8601M No. A1174-5/7 ...

Page 6

... Outline Drawing ECH8601M-TL-H ECH8601M Land Pattern Example Mass (g) Unit 0. For reference 0.65 Unit: mm 0.4 No. A1174-6/7 ...

Page 7

... Note on usage : Since the ECH8601M is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

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