CPH3360-TL-H ON Semiconductor, CPH3360-TL-H Datasheet

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CPH3360-TL-H

Manufacturer Part Number
CPH3360-TL-H
Description
MOSFET PCH 4V DRIVE SERIES
Manufacturer
ON Semiconductor
Datasheet

Specifications of CPH3360-TL-H

Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 30 V
Continuous Drain Current
- 1.6 A
Resistance Drain-source Rds (on)
303 mOhms
Mounting Style
SMD/SMT
Package / Case
SC-59
Power Dissipation
0.9 W
Ordering number : ENA0114A
CPH3360
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7015A-004
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
ON-resistance R DS (on)1=233m Ω (typ.)
4V drive
Halogen free compliance
1
Parameter
0.95
2.9
3
2
0.4
0.05
0.15
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
V DSS
V GSS
I D
I DP
P D
Tch
Tstg
Symbol
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
CPH3360-TL-H
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
CPH3360
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Electrical Connection
Conditions
1
61312 TKIM/N2011PE TKIM TC-00002659
TL
3
2
2
×0.8mm)
DATA SHEET
: CPH3
: SC-59, TO-236, SOT-23
Marking
Ratings
--55 to +150
--1.6
--6.4
--30
±20
150
0.9
No. A0114-1/7
Unit
°C
°C
W
A
A
V
V

Related parts for CPH3360-TL-H

CPH3360-TL-H Summary of contents

Page 1

... PW≤10μs, duty cycle≤ When mounted on ceramic substrate (900mm Tch Tstg Product & Package Information • Package • JEITA, JEDEC • Minimum Packing Quantity : 3,000 pcs./reel CPH3360-TL-H Packing Type: TL Electrical Connection 1 http://semicon.sanyo.com/en/network 61312 TKIM/N2011PE TKIM TC-00002659 DATA SHEET Ratings --30 ± ...

Page 2

... --0. =18.75Ω D PW=10μs D.C.≤1% G CPH3360 P.G 50Ω S Ordering Information Device CPH3360-TL-H CPH3360 Symbol Conditions -1mA =0V V (BR)DSS -30V =0V I DSS I GSS V GS =±16V = -10V -1mA V GS (off -10V -0.8A | yfs | -0.8A =--10V R DS (on ...

Page 3

... Drain Current Time -- I D 100 1 --0.01 --0.1 --1.0 Drain Current CPH3360 --2 --10V Ta=25 ° C --1.8 --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 --0.8 --0.9 --1.0 0 --0.5 IT16626 1000 Ta=25 ° C 900 800 700 600 500 400 300 200 100 0 --12 --14 --16 ...

Page 4

... Total Gate Charge 1.0 When mounted on ceramic substrate 2 (900mm ×0.8mm) 0.9 0.8 0.6 0.4 0 100 Ambient Temperature °C CPH3360 -- --1 Operation in this area is limited (on). --0 Ta=25 ° Single pulse When mounted on ceramic substrate (900mm --0.01 2.5 3.0 2 --0.1 ...

Page 5

... Embossed Taping Specifi cation CPH3360-TL-H CPH3360 No. A0114-5/7 ...

Page 6

... Outline Drawing CPH3360-TL-H CPH3360 Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 0.6 0.95 0.95 No. A0114-6/7 ...

Page 7

... Note on usage : Since the CPH3360 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

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