CPH5871-TL-H ON Semiconductor, CPH5871-TL-H Datasheet - Page 4

• Manufacturer Part Number: CPH5871-TL-H
• Description: MOSFET NCH+SBD 1.8V DRIVE SERIES
• Manufacturer: ON Semiconductor

Specifications of CPH5871-TL-H

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 3.5 A
• Resistance Drain-source Rds (on): 52 mOhms
• Mounting Style: SMD/SMT
• Package / Case: SC-74A
• Power Dissipation: 0.9 W

0.01
0.01
1.0
0.1
1.0
0.1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
14
12
10
3
2
7
5
3
2
7
5
3
2
8
6
4
2
0
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0.1
0
7 0.01
0
Operation in this area
is limited by R DS (on).
Ta=25° C
Single pulse
When mounted on ceramic substrate (600mm
Sine wave
Rectangular
wave
θ
180°
360°
2
360°
0.1
0.2
2
3
Drain-to-Source Voltage, V DS -- V
Average Output Current, I O -- A
3
5 7
0.2
Forward Voltage, V F -- V
0.4
5
P F (AV) -- I O
1.0
Current waveform 50Hz sine wave
7 0.1
I FSM -- t
(1)Rectangular wave θ =60 °
(2)Rectangular wave θ =120 °
(3)Rectangular wave θ =180 °
(4)Sine wave θ =180 °
Time, t -- s
I F -- V F
0.3
A S O
2
0.6
I
3
2
S
0.4
3
(1)
5 7
0.8
2
×0.8mm)1unit
0.5
5
20ms
10
(2) (4)(3)
7 1.0
t
PW≤10μs
[MOSFET]
1.0
0.6
2
ID00435
IT09553
IT09555
IT14375
[SBD]
[SBD]
[SBD]
3
2
0.7
1.2
5
3
CPH5871
0.0001
10000
0.001
1000
0.01
100
100
1.0
0.1
1.0
0.9
0.8
0.6
0.4
0.2
10
10
0
5
5
5
5
5
5
5
5
3
2
7
5
3
2
7
0.1
0
0
2
20
5
3
Ambient Temperature, Ta -- °C
40
5
10
Reverse Voltage, V R -- V
Reverse Voltage, V R -- V
7
When mounted on ceramic substrate
(600mm
1.0
60
P D -- Ta
I R -- V R
C -- V R
15
2
80
2
×0.8mm) 1unit
3
20
100
5
7
25
120
10
[MOSFET]
No. A1401-4/7
30
2
140
IT14376
IT09554
IT09556
[SBD]
[SBD]
3
160
35
5