ECH8675-TL-H ON Semiconductor, ECH8675-TL-H Datasheet

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ECH8675-TL-H

Manufacturer Part Number
ECH8675-TL-H
Description
MOSFET PCH+PCH 1.8V DRIVE SERIES
Manufacturer
ON Semiconductor
Datasheet

Specifications of ECH8675-TL-H

Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 20 V
Continuous Drain Current
- 4.5 A
Resistance Drain-source Rds (on)
46 mOhms
Mounting Style
SMD/SMT
Package / Case
ECH-8
Power Dissipation
1.3 W

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ECH8675-TL-H
Quantity:
100
Ordering number : ENA1437A
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7011A-001
ECH8675
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
1.8V drive
Composite type, facilitating high-density mounting
Halogen free compliance
Protection diode in
1
Parameter
8
0.65
Bottom View
Top View
2.9
5
4
0.3
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
0.15
V DSS
V GSS
I D
I DP
P D
P T
Tch
Tstg
ECH8675-TL-H
Symbol
0 to 0.02
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1200mm
When mounted on ceramic substrate (1200mm
ECH8675
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Electrical Connection
8
1
Conditions
7
2
TL
70412 TKIM/40809PE MSIM TC-00001913
6
3
2
×0.8mm) 1unit
5
4
2
×0.8mm)
DATA SHEET
: ECH8
: -
Marking
Ratings
--55 to +150
TW
LOT No.
--4.5
--20
±10
--30
150
1.3
1.5
No. A1437-1/7
Unit
°C
°C
W
W
A
A
V
V

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