ECH8672-TL-H ON Semiconductor, ECH8672-TL-H Datasheet - Page 2

• Manufacturer Part Number: ECH8672-TL-H
• Description: MOSFET PCH+PCH 1.8V DRIVE SERIES
• Manufacturer: ON Semiconductor

Specifications of ECH8672-TL-H

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 3.5 A
• Resistance Drain-source Rds (on): 85 mOhms
• Mounting Style: SMD/SMT
• Package / Case: ECH-8
• Power Dissipation: 1.3 W

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Ordering Information
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
ECH8672-TL-H
--4.5V
P.G
0V
PW=10μs
D.C.≤1%
V IN
Device
Parameter
V IN
50Ω
G
V DD = --10V
D
S
I D = --1.5A
R L =6.67Ω
ECH8672
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
Package
V OUT
ECH8
I D =--1mA, V GS =0V
V DS =--20V, V GS =0V
V GS =±8V, V DS =0V
V DS =--10V, I D =--1mA
V DS =--10V, I D =--1.5A
I D =--1.5A, V GS =--4.5V
I D =--1A, V GS =- -2.5V
I D =--0.5A, V GS =--1.8V
V DS =--10V, f=1MHz
See specifi ed Test Circuit.
V DS =--10V, V GS =--4.5V, I D =--3.5A
I S =--3.5A, V GS =0V
ECH8672
Conditions
3,000pcs./reel
Shipping
min
--0.4
--20
Pb Free and Halogen Free
2.1
Ratings
typ
--0.84
memo
320
155
3.6
7.1
4.0
0.6
1.1
65
98
66
50
21
37
32
max
--1.3
--1.2
±10
137
235
--1
85
No. A1465-2/7
Unit
mΩ
mΩ
mΩ
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V
V