MCH6431-P-TL-H ON Semiconductor, MCH6431-P-TL-H Datasheet

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MCH6431-P-TL-H

Manufacturer Part Number
MCH6431-P-TL-H
Description
MOSFET
Manufacturer
ON Semiconductor
Datasheet

Specifications of MCH6431-P-TL-H

Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
5 A
Resistance Drain-source Rds (on)
55 mOhms
Mounting Style
SMD/SMT
Package / Case
MCPH-6
Power Dissipation
1.5 W
Ordering number : ENA1852A
MCH6431
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7022A-009
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
ON-resistance R DS (on)1=42m Ω (typ.)
4V drive
Halogen free compliance
Protection diode in
6
1
6
1
0.65
Parameter
2.0
5
2
5
2
4
3
3
4
0.3
0.15
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : MCPH6
0 to 0.02
V DSS
V GSS
I D
I DP
P D
Tch
Tstg
Symbol
MCH6431-TL-H
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1200mm
MCH6431
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Electrical Connection
Conditions
3
62012 TKIM/N1010PE TKIM TC-00002505
TL
1, 2, 5, 6
4
2
×0.8mm)
DATA SHEET
: MCPH6
: SC-88, SC-70-6, SOT-363
Marking
Ratings
ZF
--55 to +150
±20
150
1.5
30
20
No. A1852-1/7
5
Unit
°C
°C
W
A
A
V
V

Related parts for MCH6431-P-TL-H

MCH6431-P-TL-H Summary of contents

Page 1

... PW≤10μs, duty cycle≤ When mounted on ceramic substrate (1200mm Tch Tstg Product & Package Information • Package • JEITA, JEDEC • Minimum Packing Quantity : 3,000 pcs./reel MCH6431-TL-H Packing Type : 0.02 Electrical Connection 3 http://semicon.sanyo.com/en/network DATA SHEET Ratings ±20 2 × ...

Page 2

... R L =7.5Ω PW=10μs D.C.≤1% G P.G 50Ω MCH6431 S Ordering Information Device MCH6431-TL-H MCH6431 Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =30V =0V I GSS V GS =±16V = (off =10V =1mA | yfs | V DS =10V =2. (on =2.5A =10V R DS (on ...

Page 3

... Drain Current Time -- =15V V GS =10V (on 1 0.1 1.0 Drain Current MCH6431 =2.5V 0 0.8 0.9 1.0 0 IT16001 160 Ta=25°C 140 120 100 --60 --40 --20 IT16003 =10V ...

Page 4

... Total Gate Charge 1.8 When mounted on ceramic substrate 2 ×0.8mm) (1200mm 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0 100 Ambient Temperature °C MCH6431 1 0.1 7 Ta=25° Single pulse 3 When mounted on ceramic substrate 2 (1200mm 0. 0.01 IT16009 120 ...

Page 5

... Taping Specifi cation MCH6431-TL-H MCH6431 No. A1852-5/7 ...

Page 6

... Outline Drawing MCH6431-TL-H MCH6431 Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 0.4 0.65 0.65 No. A1852-6/7 ...

Page 7

... Note on usage : Since the MCH6431 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

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