MCH6421-TL-E ON Semiconductor, MCH6421-TL-E Datasheet

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MCH6421-TL-E

Manufacturer Part Number
MCH6421-TL-E
Description
MOSFET NCH 1.8V DRIVE SERIES
Manufacturer
ON Semiconductor
Datasheet

Specifications of MCH6421-TL-E

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
5.5 A
Resistance Drain-source Rds (on)
38 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
MCPH-6
Minimum Operating Temperature
- 55 C
Power Dissipation
1.5 W
Ordering number : ENA1264A
MCH6421
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7022A-009
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Low ON-resistance
1.8V drive
6
1
6
1
0.65
Parameter
2.0
5
2
5
2
4
3
3
4
0.3
0.15
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : MCPH6
0 to 0.02
V DSS
V GSS
I D
I DP
P D
Tch
Tstg
Symbol
MCH6421-TL-E
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1200mm
MCH6421
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Electrical Connection
Ultrahigh-speed switching
Protection diode in
Conditions
3
TL
61312 TKIM/70908PE TIIM TC-00001490
1, 2, 5, 6
4
2
×0.8mm)
DATA SHEET
: MCPH6
: SC-88, SC-70-6, SOT-363
Marking
Ratings
KV
--55 to +150
±12
150
5.5
1.5
20
22
No. A1264-1/7
Unit
°C
°C
W
A
A
V
V

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MCH6421-TL-E Summary of contents

Page 1

... PW≤10μs, duty cycle≤ When mounted on ceramic substrate (1200mm Tch Tstg Product & Package Information • Package • JEITA, JEDEC • Minimum Packing Quantity : 3,000 pcs./reel MCH6421-TL-E Packing Type : 0.02 Electrical Connection 3 http://semicon.sanyo.com/en/network DATA SHEET Ratings ±12 5 ...

Page 2

... =5Ω D PW=10μs D.C.≤1% G MCH6421 P.G 50Ω S Ordering Information Device MCH6421-TL-E MCH6421 Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =20V =0V I GSS V GS =±8V = (off =10V =1mA | yfs | V DS =10V = (on =2A ...

Page 3

... Drain Current Time -- 100 (on 0.01 0.1 1.0 Drain Current MCH6421 4 =10V 4.0 3.5 3.0 2.5 2.0 1.5 1.5V 1.0 0 =1.2V 0 0.8 0.9 1.0 0 0.2 IT13836 110 Ta=25°C 100 --60 ...

Page 4

... Total Gate Charge 1.6 When mounted on ceramic substrate 1.5 ✕0.8mm) 2 (1200mm 1.4 1.2 1.0 0.8 0.6 0.4 0 100 120 Ambient Temperature °C MCH6421 =22A =5. 1 Operation in this 3 area is limited (on Ta=25° Single pulse 2 When mounted on ceramic substrate (1200mm ...

Page 5

... Taping Specifi cation MCH6421-TL-E MCH6421 No. A1264-5/7 ...

Page 6

... Outline Drawing MCH6421-TL-E MCH6421 Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 0.4 0.65 0.65 No. A1264-6/7 ...

Page 7

... Note on usage : Since the MCH6421 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

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