EMH2314-TL-H ON Semiconductor, EMH2314-TL-H Datasheet

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EMH2314-TL-H

Manufacturer Part Number
EMH2314-TL-H
Description
MOSFET PCH+PCH 1.8V DRIVE SERIES
Manufacturer
ON Semiconductor
Datasheet

Specifications of EMH2314-TL-H

Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 12 V
Continuous Drain Current
- 5 A
Resistance Drain-source Rds (on)
37 mOhms
Mounting Style
SMD/SMT
Package / Case
EMH-8
Power Dissipation
1.2 W
Ordering number : EN8759
EMH2314
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ.)
7045-002
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
ON-resistance R DS (on)1=28m Ω (typ.)
1.8V drive
Halogen free compliance
Protection Diode in
1
8
0.5
0.2
2.0
Parameter
4
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : EMH8
0.125
V DSS
V GSS
I D
I DP
P D
P T
Tch
Tstg
Symbol
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
EMH2314-TL-H
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
When mounted on ceramic substrate (900mm
EMH2314
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Taping Type : TL
Electrical Connection
Conditions
8
1
TL
2
7
2
×0.8mm) 1unit
2
×0.8mm)
DATA SHEET
50112PE TKIM TC-00002667
6
3
: EMH8
: -
5
4
Marking
Ratings
--55 to +150
MP
LOT No.
--12
±10
--20
150
1.0
1.2
- -5
No. 8759-1/7
Unit
°C
°C
W
W
A
A
V
V

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EMH2314-TL-H Summary of contents

Page 1

... When mounted on ceramic substrate (900mm P T When mounted on ceramic substrate (900mm Tch Tstg Product & Package Information • Package • JEITA, JEDEC • Minimum Packing Quantity : 3,000 pcs./reel EMH2314-TL-H 0.125 Taping Type : TL Electrical Connection 8 1 http://semicon.sanyo.com/en/network DATA SHEET Ratings --12 ± ...

Page 2

... --2. =2.4Ω D PW=10μs D.C.≤1% G EMH2314 P.G 50Ω S Ordering Information Device EMH2314-TL-H EMH2314 Symbol Conditions -1mA =0V V (BR)DSS --12V =0V I DSS I GSS V GS =±8V = -6V --1mA V GS (off -6V --2.5A | yfs | R DS (on --2.5A --4. (on --1 ...

Page 3

... Drain Current Time -- I D 1000 -- --4. 100 --0.1 --1.0 Drain Current EMH2314 -- --6V --6 --5 --4 --3 --2 -- --1.3V 0 --0.8 --0.9 --1.0 0 IT16893 200 Ta=25°C 180 160 140 120 100 --6 --7 ...

Page 4

... Total Gate Charge 1.4 When mounted on ceramic substrate 2 ×0.8mm) (900mm 1.2 1.0 0.8 0.6 0.4 0 100 125 Ambient Temperature °C EMH2314 --100 -- --1 --0.1 7 Ta=25° Single pulse 3 When mounted on ceramic substrate 2 (900mm --0. ...

Page 5

... Embossed Taping Specifi cation EMH2314-TL-H EMH2314 No. 8759-5/7 ...

Page 6

... Outline Drawing EMH2314-TL-H EMH2314 Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 0.3 0.5 No. 8759-6/7 ...

Page 7

... Note on usage : Since the EMH2314 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

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