DSS4160T-7 Diodes Inc., DSS4160T-7 Datasheet - Page 3

• Manufacturer Part Number: DSS4160T-7
• Description: MOSFET SS Low Sat Transisto SOT23 T&R 3K
• Manufacturer: Diodes Inc.

Specifications of DSS4160T-7

• Rohs: yes

Electrical Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain (Note 6)
Collector-Emitter Saturation Voltage (Note 6)
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
Transition Frequency
Output Capacitance
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes:
DSS4160T
Document number: DS35531 Rev. 1 - 2
6. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Characteristic
@T
A
= 25°C unless otherwise specified
Symbol
R
V
V
BV
BV
BV
V
I
I
I
CE(sat)
CE(sat)
BE(sat)
C
BE(on)
h
CBO
CES
EBO
www.diodes.com
t
t
f
t
t
obo
on
t
off
t
CBO
CEO
FE
EBO
T
d
s
r
f
3 of 6
Min
250
200
100
150
80
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
Typ
420
380
63
33
30
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
100
100
100
115
150
280
280
1.1
0.9
⎯
⎯
⎯
50
⎯
⎯
⎯
⎯
10
⎯
⎯
⎯
⎯
⎯
⎯
MHz
Unit
m Ω
nA
mV
μ A
nA
nA
pF
⎯
ns
ns
ns
ns
ns
ns
V
V
V
V
V
I
I
I
V
V
V
V
V
V
V
I
I
I
I
I
V
V
f = 100MHz
V
V
I
C
C
E
C
C
C
E
C
B1
CB
CB
EB
EB
CE
CE
CE
CE
CE
CB
CC
= 100 μ A
= 10mA
= 100 μ A
= 100mA, I
= 500mA, I
= 1A, I
= 1A, I
= 1A, I
= I
= 60V, I
= 5V, I
= 60V, I
= 60V, I
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 10V, I
= 10V, f = 1MHz
= 10V, I
B2
Test Conditions
= 25mA
B
B
B
= 100mA
= 100mA
= 50mA
C
C
C
C
C
BE
E
E
C
C
= 0
= 1mA
= 500mA
= 1A
= 1A
B
B
= 0
= 0, T
= 50mA,
= 0.5A,
DSS4160T
= 0
= 1mA
= 50mA
© Diodes Incorporated
A
January 2012
= 150°C