VEC2315-TL-H ON Semiconductor, VEC2315-TL-H Datasheet

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VEC2315-TL-H

Manufacturer Part Number
VEC2315-TL-H
Description
MOSFET PCH+PCH 4V DRIVE SERIES
Manufacturer
ON Semiconductor
Datasheet

Specifications of VEC2315-TL-H

Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 60 V
Continuous Drain Current
- 2.5 A
Resistance Drain-source Rds (on)
137 mOhms
Mounting Style
SMD/SMT
Package / Case
VEC-8
Power Dissipation
1 W
Ordering number : EN8699A
VEC2315
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7012-002
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
ON-resistance R DS (on)1=105m Ω (typ.)
4V drive
High-density mounting
Protection diode in
Halogen free compliance
8
1
7
2
2.9
Parameter
6 5
0.65
3
4
0.3
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : VEC8
0.15
V DSS
V GSS
I D
I DP
P T
Tch
Tstg
P D
VEC2315-TL-H
Symbol
P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
When mounted on ceramic substrate (900mm
VEC2315
Conditions
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Electrical Connection
1
8
80812 TKIM/30712PA TKIM TC-00002731
TL
2
2
×0.8mm) 1unit
×0.8mm)
7
2
DATA SHEET
6
3
5
4
: VEC8
: -
Marking
Ratings
--55 to +150
UM
LOT No.
--2.5
--60
±20
--10
150
0.9
1.0
No.8699-1/7
Unit
°C
°C
W
W
A
A
V
V

Related parts for VEC2315-TL-H

VEC2315-TL-H Summary of contents

Page 1

... When mounted on ceramic substrate (900mm P T When mounted on ceramic substrate (900mm Tch Tstg Product & Package Information • Package • JEITA, JEDEC • Minimum Packing Quantity : 3,000 pcs./reel VEC2315-TL-H Packing Type : TL Electrical Connection http://semicon.sanyo.com/en/network DATA SHEET Ratings --60 ±20 --2.5 ...

Page 2

... Gate-to-Drain “Miller” Charge Diode Forward Voltage Switching Time Test Circuit --30V --10V --1. =20Ω D PW=10μs D.C.≤1% G VEC2315 P.G 50Ω S Ordering Information Device VEC2315-TL --2.5 --2.0 --1.5 --1.0 --0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 Drain-to-Source Voltage VEC2315 Symbol Conditions V (BR)DSS I D =--1mA =0V ...

Page 3

... Drain Current -- --30V -- --2.5A --8 --7 --6 --5 --4 --3 --2 -- Total Gate Charge VEC2315 300 Ta=25°C 250 200 150 100 50 0 --12 --14 --16 --60 --40 --20 IT15913 --10V --1 --0 --0 ...

Page 4

... 1.2 When mounted on ceramic substrate ×0.8mm) 2 (900mm 1.0 0.9 0.8 0.6 0.4 0 100 120 Ambient Temperature °C VEC2315 140 160 IT15921 No.8699-4/7 ...

Page 5

... Taping Specifi cation VEC2315-TL-H VEC2315 No.8699-5/7 ...

Page 6

... Outline Drawing VEC2315-TL-H VEC2315 Land Pattern Example Mass (g) Unit 0.015 mm * For reference 0.65 Unit: mm 0.4 No.8699-6/7 ...

Page 7

... Note on usage : Since the VEC2315 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

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