VEC2616-TL-H ON Semiconductor, VEC2616-TL-H Datasheet
VEC2616-TL-H
Specifications of VEC2616-TL-H
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VEC2616-TL-H Summary of contents
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... Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : VEC8 VEC2616 SANYO Semiconductors N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Symbol Conditions V DSS V GSS PW≤10μs, duty cycle≤ When mounted on ceramic substrate (900mm ...
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... Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage VEC2616 Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =60V =0V I GSS V GS =±16V =0V ...
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... IT15537 --30V --1. =20Ω OUT G VEC2616 50Ω =10V 0 0.5 1.0 1.5 2.0 2.5 3.0 Gate-to-Source Voltage (on --40 -- 100 Ambient Temperature °C No. A1822-3/6 [Nch] 3.5 4 ...
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... Total Gate Charge --2.5 --2.0 --1.5 --1.0 --0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 Drain-to-Source Voltage VEC2616 [Nch 0.2 10 IT13793 [Nch] 1000 V DD =30V =10V 100 ...
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... Drain Current -- --30V -- --2.5A --8 --7 --6 --5 --4 --3 --2 -- Total Gate Charge VEC2616 [Pch] 300 Ta=25°C 250 200 150 100 50 0 --12 --14 --16 --60 --40 --20 IT15913 [Pch --10V --1 --0.1 ...
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... Ambient Temperature °C Note on usage : Since the VEC2616 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any " ...