ECH8671-TL-H ON Semiconductor, ECH8671-TL-H Datasheet

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ECH8671-TL-H

Manufacturer Part Number
ECH8671-TL-H
Description
MOSFET PCH+PCH 1.8V DRIVE SERIES
Manufacturer
ON Semiconductor
Datasheet

Specifications of ECH8671-TL-H

Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 12 V
Continuous Drain Current
- 3.5 A
Resistance Drain-source Rds (on)
77 mOhms
Mounting Style
SMD/SMT
Package / Case
ECH-8
Power Dissipation
1.3 W
Ordering number : ENA1456A
ECH8671
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7011A-001
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
1.8V drive
Composite type, facilitating high-density mounting
Halogen free compliance
1
8
Parameter
0.65
Bot t om View
Top View
2.9
5
4
0.3
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
0.15
V DSS
V GSS
I D
I DP
P D
P T
Tch
Tstg
ECH8671-TL-H
Symbol
0 t o 0.02
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1200mm
When mounted on ceramic substrate (1200mm
ECH8671
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Electrical Connection
8
1
Conditions
7
2
TL
60612 TKIM/42209PE MSIM TC-00001907
6
3
2
×0.8mm) 1unit
5
4
2
×0.8mm)
DATA SHEET
: ECH8
: -
Marking
Ratings
--55 to +150
TS
LOT No.
--3.5
--12
±10
--30
150
1.3
1.5
No. A1456-1/7
Unit
°C
°C
W
W
A
A
V
V

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ECH8671-TL-H Summary of contents

Page 1

... When mounted on ceramic substrate (1200mm P T When mounted on ceramic substrate (1200mm Tch Tstg Product & Package Information • Package • JEITA, JEDEC • Minimum Packing Quantity : 3,000 pcs./reel ECH8671-TL-H Packing Type : 0.02 TL Electrical Connection http://semicon.sanyo.com/en/network ...

Page 2

... --1. =4Ω D PW=10μs D.C.≤1% G ECH8671 P.G 50Ω S Ordering Information Device ECH8671-TL-H ECH8671 Symbol Conditions V (BR)DSS I D =--1mA =0V I DSS V DS =--12V =0V I GSS V GS =±8V = (off =--6V =--1mA | yfs | V DS =--6V =--1. (on =--1.5A =--4. (on =--1A ...

Page 3

... Drain Current Time -- 100 --0.01 --0.1 --1.0 Drain Current ECH8671 --6 --10V --5.5 --5.0 --4.5 --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1 --1.2V --0.5 0 --0.8 --0.9 --1.0 0 IT14572 220 Ta=25°C 200 180 160 140 120 100 --6 --7 --8 ...

Page 4

... Total Gate Charge 1.6 When mounted on ceramic substrate 1.5 2 (1200mm ×0.8mm) 1.4 1.3 1.2 1.0 0.8 0.6 0.4 0 100 Ambient Temperature °C ECH8671 -- --1 --0 Ta=25° Single pulse 2 When mounted on ceramic substrate (1200mm --0.01 3.5 4.0 4 --0.01 IT14580 120 140 ...

Page 5

... Embossed Taping Specifi cation ECH8671-TL-H ECH8671 No. A1456-5/7 ...

Page 6

... Outline Drawing ECH8671-TL-H ECH8671 Land Pattern Example Mass (g) Unit 0. For reference 0.65 Unit: mm 0.4 No. A1456-6/7 ...

Page 7

... Note on usage : Since the ECH8671 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

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