VN2406L-P013-G Supertex, VN2406L-P013-G Datasheet

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VN2406L-P013-G

Manufacturer Part Number
VN2406L-P013-G
Description
MOSFET 240V 6Ohm
Manufacturer
Supertex
Datasheet

Specifications of VN2406L-P013-G

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
240 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.9 A
Resistance Drain-source Rds (on)
6 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Minimum Operating Temperature
- 55 C
Power Dissipation
1 W
Factory Pack Quantity
2000
Typical Turn-off Delay Time
23 ns
Features
Applications
For packaged products, -G indicates package is RoHS compliant (‘Green’).
Consult factory for die / wafer form part numbers.
Refer to Die Specification VF25 for layout and dimensions.
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Supertex inc.
Ordering Information
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
VN2406
Device
ISS
Supertex inc.
and fast switching speeds
VN2406L-G
Package
TO-92
N-Channel Enhancement-Mode
Vertical DMOS FET
1235 Bordeaux Drive, Sunnyvale, CA 94089
-55
O
C to +150
Value
BV
BV
±20V
DGS
DSS
O
BV
C
DSS
240
General Description
This enhancement-mode (normally-off) transistor utilizes a
vertical DMOS structure and Supertex’s well-proven, silicon-
gate manufacturing process. This combination produces a
device with the power handling capabilities of bipolar transistors
and the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Pin Configuration
Product Marking
Package may or may not include the following marks: Si or
(V)
/BV
DGS
YY W W
Si VN
2 4 0 6 L
Tel: 408-222-8888
SOURCE
R
(max)
YY = Year Sealed
WW = Week Sealed
DS(ON)
6.0
(Ω)
TO-92 (L)
TO-92 (L)
= “Green” Packaging
www.supertex.com
DRAIN
GATE
VN2406
I
(min)
D(ON)
1.0
(A)

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VN2406L-P013-G Summary of contents

Page 1

... Ordering Information Package Device TO-92 VN2406 VN2406L-G For packaged products, -G indicates package is RoHS compliant (‘Green’). Consult factory for die / wafer form part numbers. Refer to Die Specification VF25 for layout and dimensions. Absolute Maximum Ratings Parameter Drain-to-source voltage ...

Page 2

... Diode forward voltage drop SD Notes: 1. All D.C. parameters 100% tested All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V INPUT 10 (ON) t d(ON) VDD 10% OUTPUT 0V 90% Supertex inc Power Dissipation D D † (pulsed (mA) (A) (W) 190 1.7 1 unless otherwise specified) ...

Page 3

... This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives Supertex inc ...

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